STMicroelectronics STN3N45K3 N-Channel MOSFET 450V 600mA SOT-223

STMicroelectronics STN3N45K3 N-Channel MOSFET 450V 600mA SOT-223

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High-Performance Power Management with STN3N45K3 MOSFET

STMicroelectronics continues to set industry standards with its SuperMESH3™ series, and the STN3N45K3 N-Channel MOSFET exemplifies this innovation. Engineered for demanding power electronics applications, this 450V 600mA SOT-223 device combines advanced semiconductor technology with robust performance characteristics. Let's explore how this component can enhance your next design project through its superior electrical parameters and thermal management capabilities.

Technical Excellence in Power Semiconductor Design

The STN3N45K3 leverages STMicroelectronics' proprietary SuperMESH3™ technology to deliver exceptional switching performance and energy efficiency. This N-Channel MOSFET features a 450V drain-source voltage rating with a maximum on-state resistance of just 4Ω at 600mA, making it ideal for high-voltage power conversion systems. The device's ±30V gate voltage tolerance ensures reliable operation in challenging environments while maintaining optimal performance levels.

Engineers will appreciate the device's 9.5nC gate charge specification, which enables rapid switching transitions while minimizing power losses. The integrated SOT-223 package provides excellent thermal dissipation characteristics, allowing the MOSFET to maintain stable operation at its maximum 3W power dissipation rating. These technical advantages translate to real-world benefits in various power electronics applications.

ParameterSpecification
Max Voltage450 V
Continuous Drain Current600mA
On-Resistance4Ω @ 10V VGS
Gate Charge9.5 nC
Operating Temperature150°C TJ
Practical Applications and System Integration

The STN3N45K3's versatile design makes it suitable for a wide range of applications including power supplies, motor control systems, and industrial automation equipment. Its surface-mount SOT-223 packaging facilitates easy integration into modern PCB designs while maintaining excellent thermal performance. The device's 164pF input capacitance (at 50V VDS) ensures compatibility with various gate driver configurations, simplifying system design and optimization.

Power supply designers will find particular value in the MOSFET's 4.5V gate threshold voltage, which enables efficient operation with standard logic-level drivers. The component's robust construction and 20,000-unit minimum quantity availability make it an excellent choice for both prototyping and volume production scenarios across multiple industries.

Why Choose the STN3N45K3 MOSFET?

Several key advantages position this device as a preferred choice for power electronics engineers:

  • SuperMESH3™ technology for superior switching performance
  • Industrial-grade thermal management in compact SOT-223 package
  • High voltage tolerance with reliable 450V operation
  • Cost-effective solution with competitive pricing structure
  • Availability through STMicroelectronics' global distribution network

With its combination of advanced technical specifications and proven reliability, the STN3N45K3 represents an optimal balance between performance and value. Whether you're developing next-generation power supplies or upgrading existing designs, this MOSFET offers the characteristics needed to meet modern efficiency standards while maintaining design flexibility.

Tags: Power MOSFET, N-Channel Transistor, High Voltage MOSFET, STMicroelectronics Components, SOT-223 Package

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