STMicroelectronics STY145N65M5 MOSFET N-Channel 650V 138A MDmesh™ V Series
- Brand: STMicroelectronics
- Product Code: STY145N65M5
- Availability: In Stock
$8.50
- Ex Tax: $8.50
High-Performance STY145N65M5 MOSFET for Demanding Power Applications
STMicroelectronics continues to push the boundaries of power semiconductor technology with its MDmesh™ V Series, exemplified by the STY145N65M5 N-Channel MOSFET. This advanced device combines cutting-edge silicon design with robust packaging to deliver exceptional performance in high-voltage industrial and automotive systems. With a rated drain-source voltage of 650V and continuous drain current capability of 138A, this MOSFET represents the perfect balance between power handling and efficiency.
At the heart of the STY145N65M5's impressive performance lies its innovative MDmesh V technology platform. This proprietary solution significantly reduces on-resistance (Rds(on)) to just 15mOhm, measured at 69A and 10V gate-source voltage. The low gate charge (Qg) of 414nC at 10V further enhances switching efficiency, making this device particularly suitable for high-frequency power conversion applications. The device's thermal management capabilities are equally impressive, with a maximum power dissipation rating of 625W at case temperature.
Technical Excellence in Power Semiconductor Design
The STY145N65M5 demonstrates STMicroelectronics' commitment to power electronics innovation through several key specifications:
| Parameter | Value |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 138A |
| On-Resistance | 15mOhm |
| Gate Charge | 414nC |
Engineered for reliability in harsh environments, this MOSFET features a ±25V gate-source voltage rating and operates safely up to 150°C junction temperature. The MAX247™ package with TO-247-3 through-hole mounting ensures excellent thermal dissipation while maintaining mechanical durability.
For industrial equipment designers, the STY145N65M5 opens new possibilities in power supply design. Its combination of high breakdown voltage and low on-state resistance enables more compact power systems with improved energy efficiency. Automotive electronics engineers will appreciate its ability to handle high transient loads while maintaining stable performance across wide temperature ranges.
The device's 18,500pF input capacitance at 100V Vds ensures stable operation in high-voltage circuits, while the 5V gate threshold voltage at 250µA provides reliable switching characteristics. These parameters make it particularly well-suited for applications such as motor drives, power factor correction circuits, and industrial battery management systems.
Tags: Power Electronics, Semiconductor Devices, Industrial Components, Automotive Electronics, High-Voltage Transistors