STMicroelectronics STW9N150 N-Channel MOSFET 1500V 8A TO-247-3 Package
- Brand: STMicroelectronics
- Product Code: STW9N150
- Availability: In Stock
$3.40
- Ex Tax: $3.40
STMicroelectronics STW9N150: High-Voltage Power MOSFET for Demanding Applications
Engineered for high-voltage power conversion systems, the STW9N150 from STMicroelectronics combines robust performance with advanced PowerMESH™ technology. This N-channel MOSFET delivers exceptional efficiency and reliability in industrial motor drives, renewable energy inverters, and high-frequency power supplies. With its 1500V rating and optimized on-resistance, this device addresses the critical needs of modern power electronics while maintaining compatibility with standard gate drivers.
Key Technical Specifications
The STW9N150's electrical characteristics make it ideal for challenging environments:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 1500 V |
| Continuous Drain Current (ID) | 8 A @ 25°C |
| RDS(on) Max | 2.5 Ω @ 4A, 10V VGS |
| Gate Charge (Qg) | 89.3 nC @ 10V |
These specifications enable efficient switching in hard-switching topologies while maintaining thermal stability during continuous operation. The ±30V gate voltage tolerance provides design flexibility, and the 5V threshold voltage ensures compatibility with standard logic-level drivers.
Advanced Packaging and Thermal Performance
Housed in the industry-standard TO-247-3 package, this MOSFET features through-hole mounting for mechanical stability in high-vibration environments. The package design facilitates efficient heat dissipation with a maximum power dissipation rating of 320W at case temperature. The integrated PowerMESH™ structure reduces switching losses while maintaining avalanche energy ratings for improved ruggedness.
The device's -55°C to 150°C operating temperature range suits applications in harsh industrial environments. With a typical input capacitance of 3255 pF at 25V VDS, designers can optimize gate drive requirements while maintaining fast switching performance.
Design Advantages and Applications
The STW9N150's combination of high voltage capability and reasonable on-resistance makes it particularly valuable in solar inverters, uninterruptible power supplies (UPS), and industrial motor control systems. Its 1500V rating provides safety margin in 1100V DC bus applications while maintaining conduction losses below 2.5Ω. The 8A continuous drain current supports power stages up to 12kW when combined with appropriate thermal management.
Key benefits include:
- Reduced switching losses through optimized gate charge characteristics
- Enhanced reliability through advanced silicon technology
- Improved thermal management via TO-247 package design
- Compatibility with standard gate driver ICs
This device particularly excels in applications requiring high-voltage isolation combined with efficient power delivery. Its performance characteristics support designs meeting modern efficiency standards like 80 PLUS Titanium and CoC Tier-2 requirements.
Quality and Availability
Manufactured under STMicroelectronics' stringent quality control systems, the STW9N150 maintains active status with tube packaging for automated assembly processes. With 3960 units currently in stock and a minimum order quantity of 1, this component offers flexible procurement options for both prototyping and volume production. The device complies with RoHS standards while maintaining backward compatibility with existing high-voltage MOSFET designs.
Tags: Power MOSFET, High Voltage Transistor, TO-247 Package, Power Electronics, Semiconductor Components