STMicroelectronics STW75N60M6 MOSFET
- Brand: STMicroelectronics
- Product Code: STW75N60M6
- Availability: In Stock
$2.40
- Ex Tax: $2.40
High-Performance N-Channel MOSFET for Demanding Power Applications
STMicroelectronics' STW75N60M6 MOSFET represents the cutting-edge MDmesh™ M6 series technology, engineered for high-voltage power conversion systems requiring exceptional efficiency and reliability. This N-channel power transistor combines advanced silicon design with robust TO-247 packaging to deliver superior thermal management and electrical performance in industrial and automotive applications.
Advanced Technical Specifications
Rated for 600V drain-source voltage and capable of handling 72A continuous drain current at 25°C, this MOSFET features an ultra-low on-resistance of 36mΩ at 10V gate-source voltage. The device's optimized gate charge (106nC) and input capacitance (4850pF) enable fast switching performance while maintaining stability in high-frequency operations. With ±25V gate-source voltage protection and an operating temperature range from -55°C to 150°C, this component ensures reliable operation in extreme environments.
| Parameter | Value |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 72A |
| Rds(on) Max | 36mΩ |
| Package Type | TO-247-3 |
Design Advantages
Utilizing ST's sixth-generation MDmesh™ technology, this power MOSFET minimizes conduction losses through its innovative planar stripe layout. The through-hole mounting design with TO-247 packaging provides excellent heat dissipation capabilities, supporting 446W power dissipation at case temperature. The 250µA threshold voltage (4.75V max) ensures compatibility with standard gate drivers while maintaining precise control over switching characteristics.
Key applications include:
- Industrial motor drives
- Switch-mode power supplies
- Uninterruptible power systems
- Automotive powertrain systems
- Renewable energy inverters
Reliability and Compliance
This active status component meets stringent industry standards for power semiconductors, featuring a robust design that exceeds typical lifetime requirements. The device's high avalanche energy rating and short-circuit withstand capability make it suitable for demanding environments where system longevity is critical. Its TO-247 package provides mechanical stability while maintaining electrical isolation for enhanced safety.
For engineers seeking high-performance power solutions, the STW75N60M6 offers an optimal balance of electrical characteristics, thermal management, and design flexibility. The device's technical specifications and proven reliability make it a preferred choice for next-generation power conversion systems requiring both high efficiency and compact design.
Tags: Power Electronics, Semiconductor, N-Channel MOSFET, TO-247 Package, High Voltage Transistor