STMicroelectronics STW24N60M2 N-Channel MOSFET 600V 18A TO-247-3

High-Performance Power Management with STMicroelectronics STW24N60M2

In the rapidly evolving landscape of power electronics, the STW24N60M2 from STMicroelectronics emerges as a reliable solution for engineers seeking efficient and robust switching capabilities. This N-Channel MOSFET, designed with advanced MDmesh™ II Plus technology, combines high voltage endurance with exceptional current handling capacity, making it ideal for applications ranging from industrial power supplies to renewable energy systems. Its TO-247-3 package ensures compatibility with standard heat sink solutions, while its 600V rating and 18A continuous drain current specification position it as a versatile component for high-power designs.

Key Technical Specifications

Engineered for optimal performance in demanding environments, the STW24N60M2 features:

Advanced Features for Enhanced Efficiency

The STW24N60M2 incorporates STMicroelectronics' proprietary MDmesh technology, which significantly reduces on-state resistance while maintaining exceptional switching performance. This innovation translates to lower conduction losses and improved thermal management in power conversion applications. The device's ±25V gate voltage rating provides enhanced robustness against transient conditions, while its 1060 pF input capacitance (at 100V Vds) ensures fast switching transitions in high-frequency circuits.

Design Flexibility and Thermal Performance

With a power dissipation rating of 150W (at case temperature), this MOSFET demonstrates excellent thermal characteristics when mounted on standard heat sinks. The through-hole TO-247-3 package facilitates secure PCB mounting while enabling efficient heat transfer. The device's 4V gate threshold voltage (at 250μA) allows compatibility with standard gate driver circuits, simplifying system integration across various power supply topologies including flyback, forward, and LLC resonant converters.

Applications and System Integration

This versatile N-Channel MOSFET finds applications in multiple domains requiring reliable high-voltage switching:

• Industrial motor drives and variable frequency drives
• Photovoltaic inverters and energy storage systems
• High-efficiency power supplies (80 PLUS certified)
• Electric vehicle charging infrastructure
• Uninterruptible power supply (UPS) systems

Its RoHS-compliant packaging and Pb-free construction make it suitable for environmentally conscious designs, while its active product status assures long-term supply chain stability.

Performance Comparison with Industry Standards

Design Considerations and Best Practices

When implementing the STW24N60M2 in circuit designs, engineers should consider several factors to maximize performance and longevity. Proper gate drive circuitry with adequate current sourcing/sinking capability ensures fast switching transitions, reducing switching losses. For parallel operation configurations, careful attention to PCB layout symmetry and thermal management is crucial. While the device's inherent avalanche rating provides some robustness against voltage spikes, incorporating appropriate snubber circuits remains recommended for optimal reliability in inductive load switching applications.

Supply Chain and Cost-Effectiveness

Available in tube packaging with competitive pricing at volume quantities, this MOSFET offers an attractive balance between performance and cost. Its widespread availability through authorized distributors ensures design engineers can maintain production continuity while meeting demanding efficiency standards. The component's compatibility with automated pick-and-place systems further enhances its value proposition for high-volume manufacturing environments.

Tags: Power Electronics, Voltage Regulators, Industrial Components, Energy Efficiency, Semiconductor Devices