STMicroelectronics STQ1NK60ZR-AP N-Channel MOSFET 600V 300mA TO-92-3 Package
- Brand: STMicroelectronics
- Product Code: STQ1NK60ZR-AP
- Availability: In Stock
$0.10
- Ex Tax: $0.10
High-Performance STMicroelectronics STQ1NK60ZR-AP N-Channel MOSFET for Demanding Power Applications
Engineered for reliability and efficiency, the STMicroelectronics STQ1NK60ZR-AP N-Channel MOSFET represents a breakthrough in power semiconductor technology. This 600V, 300mA transistor combines advanced SuperMESH™ design with robust TO-92-3 packaging, delivering exceptional performance across industrial, automotive, and consumer electronics applications. With its optimized balance of voltage handling, thermal stability, and switching speed, this device addresses the critical needs of modern power systems requiring compact, high-efficiency solutions.
Technical Excellence in Power Management
At the core of the STQ1NK60ZR-AP's capabilities is its ability to manage high voltage demands while maintaining exceptional conductivity. The device's 600 V drain-source voltage rating enables reliable operation in high-power switching circuits, while its 300 mA continuous drain current ensures stable performance in load management scenarios. The advanced MOSFET architecture achieves a remarkably low RDS(on) of 15Ω at 400 mA and 10 V gate-source voltage, minimizing conduction losses and improving system efficiency. This performance is maintained across extreme operating conditions, with a wide operating temperature range from -55°C to 150°C.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID) | 300 mA (Tc) |
| On-State Resistance (RDS(on)) | 15Ω @ 400mA, 10V |
| Gate Charge (Qg) | 6.9 nC @ 10 V |
| Power Dissipation (Tc) | 3 W |
Advanced Design for Modern Electronics
Beyond its impressive electrical characteristics, the STQ1NK60ZR-AP incorporates STMicroelectronics' proprietary SuperMESH™ technology, which optimizes the device's electric field distribution for superior breakdown voltage performance. This innovation enables designers to create more compact power circuits while maintaining exceptional thermal management capabilities. The TO-92-3 package offers excellent mechanical stability and heat dissipation properties, making it particularly suitable for through-hole mounting applications where physical durability is critical.
The transistor's ±30 V gate voltage rating provides enhanced protection against voltage spikes, while its 4.5 V gate threshold voltage ensures compatibility with standard logic-level drive circuits. With an input capacitance of 94 pF at 25 V VDS, the device achieves fast switching transitions that reduce switching losses in high-frequency applications. These characteristics make it particularly valuable in power supplies, motor control circuits, and solid-state relay designs.
Reliability and Versatility Across Applications
This N-Channel MOSFET excels in diverse applications ranging from industrial automation systems to consumer electronics power management. Its 3W power dissipation capability (at case temperature) allows operation in high-stress environments without additional cooling infrastructure. The device's robust construction meets automotive temperature requirements while maintaining the compact footprint needed for modern electronics designs. From LED lighting control to battery management systems, the STQ1NK60ZR-AP delivers consistent performance across demanding operating conditions.
STMicroelectronics' commitment to quality is evident in this device's production specifications. The transistor maintains stable performance across its entire operating temperature range, with minimal parameter drift over time. This reliability makes it an ideal choice for critical applications in harsh environments, including industrial motor drives, power factor correction circuits, and high-voltage switching systems.
Tags: MOSFET Transistors, STMicroelectronics Components, High-Voltage FETs, TO-92 Package Devices, Power Electronics