STMicroelectronics STQ1HNK60R-AP N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STQ1HNK60R-AP
- Availability: In Stock
$0.15
- Ex Tax: $0.15
STQ1HNK60R-AP: High-Performance N-Channel MOSFET for Demanding Applications
STMicroelectronics continues to set industry standards with its STQ1HNK60R-AP N-Channel MOSFET, a cutting-edge power management solution designed for engineers requiring exceptional performance in high-voltage applications. This advanced component from the renowned SuperMESH™ series combines robust technical specifications with reliable operation, making it an ideal choice for modern electronic systems where efficiency and durability are paramount.
Technical Excellence in Power Management
Engineered with precision, the STQ1HNK60R-AP delivers impressive electrical characteristics that address diverse design requirements. With a 600V Drain-Source Voltage (Vdss) rating and 400mA continuous drain current capability, this device excels in power conversion systems demanding both high voltage tolerance and efficient current handling. The MOSFET's optimized Rds(on) of 8.5Ω at 500mA and 10V Vgs ensures minimal power loss during operation, while maintaining excellent thermal stability with its 3W (Tc) power dissipation rating.
What truly distinguishes this component is its comprehensive protection features and operational flexibility. The ±30V gate-source voltage tolerance provides enhanced reliability in fluctuating environments, while the 3.7V gate threshold voltage enables efficient switching performance. With 10nC gate charge and 156pF input capacitance, the STQ1HNK60R-AP achieves fast switching speeds without compromising on stability, making it particularly suitable for high-frequency applications.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 400mA |
| Rds(on) Max | 8.5Ω @ 10V |
| Operating Temperature | -55°C to 150°C |
Engineering Versatility
Housed in a compact TO-92-3 (TO-226AA) package, this through-hole MOSFET offers excellent mechanical stability while maintaining compatibility with standard PCB assembly processes. The TO-226-3 footprint ensures reliable mounting across various board types, while the device's thermal characteristics support consistent performance in demanding environments. This combination of mechanical and electrical specifications makes the STQ1HNK60R-AP particularly well-suited for applications requiring both space efficiency and robust power handling.
The component's design philosophy emphasizes adaptability across multiple domains. Its 600V rating makes it an excellent choice for AC-DC converters, while the optimized switching characteristics benefit motor control circuits and lighting systems. The wide operating temperature range (-55°C to 150°C) ensures reliable performance in both industrial and automotive environments, where thermal stability remains crucial for long-term operation.
Reliability and Compliance
As part of STMicroelectronics' Active product status lineup, the STQ1HNK60R-AP undergoes rigorous quality assurance processes to meet industry-standard reliability requirements. The device's SuperMESH™ technology implementation contributes to its superior avalanche energy ratings, providing enhanced robustness against voltage transients. With its cut-tape packaging option, this MOSFET offers flexibility for both prototyping and volume production scenarios.
Engineers will appreciate the device's compatibility with standard manufacturing processes, combined with its proven reliability in demanding applications. The component's specifications meet or exceed industry benchmarks for power MOSFETs in its class, making it a trusted solution for designers developing next-generation electronic systems.
Tags: Power Electronics, Voltage Regulation, Circuit Design, Semiconductor Components, Electrical Engineering