STMicroelectronics STP80N6F6 MOSFET N-Channel 60V 110A TO-220
- Brand: STMicroelectronics
- Product Code: STP80N6F6
- Availability: In Stock
$0.65
- Ex Tax: $0.65
High-Performance STP80N6F6 N-Channel MOSFET for Demanding Power Applications
STMicroelectronics' STP80N6F6 MOSFET represents a pinnacle of power transistor technology, delivering exceptional performance in automotive and industrial applications. This N-channel power MOSFET combines high voltage capability (60V) with impressive current handling (110A) in a compact TO-220 package, making it ideal for modern power electronics designs requiring both efficiency and reliability.
Key Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 110A @25°C |
| Rds(on) Max | 5.8mΩ @10V Vgs |
| Gate Charge | 122nC |
Engineered with STMicroelectronics' advanced DeepGATE™ and STripFET™ VI technologies, this automotive-grade transistor (qualified to AEC-Q101 standards) offers optimized switching characteristics and minimal conduction losses. The ±20V gate voltage tolerance provides design flexibility while maintaining robust operation across extreme temperature ranges (-55°C to 175°C).
As a member of the TO-220 family, this through-hole component combines mechanical durability with excellent thermal management capabilities. Its 120W power dissipation rating (at case temperature) enables reliable operation in high-stress environments like motor control circuits, power supplies, and automotive systems.
Performance Advantages
With an input capacitance of 7480pF and threshold voltage of 4.5V, the STP80N6F6 strikes an optimal balance between fast switching and noise immunity. The device's 10V drive voltage specification ensures compatibility with standard gate drivers while maintaining minimal on-resistance, which directly translates to reduced power losses and thermal generation.
While technically classified as an obsolete product, this MOSFET remains widely used in legacy systems and industrial equipment where its proven reliability and performance characteristics continue to deliver value. The TO-220-3 package format offers convenient mounting options while maintaining electrical isolation.
This power transistor's design philosophy emphasizes system efficiency improvements through reduced conduction losses (5.8mΩ Rds(on)) and optimized switching parameters. When compared to similar devices in its class, the STP80N6F6 demonstrates superior thermal performance, with its 110A current rating maintained even under challenging thermal conditions.
Tags: Power Electronics, Automotive Components, High Current MOSFET, Industrial Transistors, Semiconductor Devices