STMicroelectronics STP140NF75 N-Channel MOSFET 75V 120A TO-220AB

High-Performance Power Management with STMicroelectronics STP140NF75

Engineered for demanding power applications, the STP140NF75 from STMicroelectronics represents the third generation of STripFET™ trench-gate technology. This N-Channel MOSFET combines advanced semiconductor design with robust packaging to deliver exceptional electrical performance and thermal stability in switching applications requiring high current handling and minimal conduction losses.

Technical Excellence in Power Transistor Design

Operating with a 75V drain-source voltage rating and 120A continuous drain current capacity at 25°C, this device establishes new benchmarks in power transistor efficiency. The optimized trench structure achieves an impressive 7.5mΩ maximum on-resistance at 70A and 10V gate-source voltage, significantly reducing power dissipation in high-current circuits. With a gate charge of 218nC at 10V, designers benefit from faster switching transitions while maintaining excellent thermal performance.

Industrial and Automotive Grade Reliability

Manufactured to meet rigorous industrial standards, this TO-220AB packaged MOSFET operates across extreme temperature ranges from -55°C to 175°C, making it ideal for harsh environments. The ±20V gate-source voltage tolerance provides enhanced robustness against voltage transients, while the 310W maximum power dissipation rating enables reliable operation in high-temperature conditions. These characteristics make it particularly suitable for automotive power systems, motor controllers, and industrial power supplies.

Key performance advantages include:

• Low on-resistance for minimal conduction losses
• High gate charge efficiency for fast switching
• Wide operating temperature range
• Robust thermal dissipation through TO-220 packaging

Design Flexibility in Power Electronics

The STP140NF75's combination of electrical characteristics and mechanical durability opens new possibilities in power circuit design. Its optimized input capacitance (5000pF @ 25V) enables stable parallel operation in multi-device configurations, while the 4V gate threshold voltage ensures compatibility with standard logic level drivers. Engineers developing DC-DC converters, battery management systems, or motor control circuits will appreciate its balance of performance parameters.

This third-generation STripFET™ device demonstrates STMicroelectronics' commitment to advancing power semiconductor technology. The through-hole package simplifies PCB mounting while maintaining excellent thermal contact with heatsinks, ensuring long-term reliability in continuous operation scenarios.

Tags: Power MOSFET, High Current Transistor, TO-220 Package, Voltage Regulator, Automotive Electronics