STMicroelectronics STF6N60M2 MDmesh™ II Plus N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STF6N60M2
- Availability: In Stock
$0.35
- Ex Tax: $0.35
High-Performance Power Management with STMicroelectronics STF6N60M2 MOSFET
Engineered for demanding industrial and automotive applications, the STMicroelectronics STF6N60M2 N-Channel MOSFET represents the pinnacle of power transistor technology. Part of the renowned MDmesh™ II Plus series, this 600V/4.5A device combines advanced silicon design with robust packaging to deliver exceptional efficiency and reliability in power conversion systems.
Key Technical Advantages
At the heart of the STF6N60M2 lies STMicroelectronics' proprietary MDmesh technology, which optimizes the trade-off between conduction and switching losses. With a maximum RDS(on) of just 1.2Ω at 10V gate drive, this MOSFET achieves industry-leading performance metrics that translate to cooler operation and higher system efficiency. The device's 600V breakdown voltage rating makes it ideal for high-voltage applications while maintaining excellent thermal stability.
| Parameter | Specification |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 4.5A |
| RDS(on) Max | 1.2Ω @ 2.25A, 10V |
| Gate Charge (Qg) | 8nC @ 10V |
Design Excellence in Power Electronics
The STF6N60M2's TO-220FP package offers superior thermal dissipation characteristics compared to standard TO-220 variants. This full-pack configuration enables direct mounting to heatsinks while maintaining electrical isolation, making it particularly suitable for industrial motor drives and power supply applications where thermal management is critical.
With a ±25V gate voltage rating and 4V threshold voltage maximum, this MOSFET provides enhanced design flexibility. The 232pF input capacitance at 100V VDS ensures fast switching transitions while maintaining gate drive efficiency. These characteristics make it particularly well-suited for high-frequency power conversion applications in renewable energy systems and industrial automation equipment.
Reliability and Operational Robustness
Engineered to meet the most stringent quality requirements, the STF6N60M2 operates across the full industrial temperature range (-55°C to 150°C). Its 20W power dissipation rating (TC) ensures reliable operation in demanding environments. The device's inherent avalanche ruggedness and short-circuit withstand capability make it ideal for motor control applications where electrical stress is a common concern.
This MOSFET's compliance with major industry standards, including ECOPACK® environmental regulations, positions it as an ideal solution for modern power electronics designs seeking both performance and sustainability. Its through-hole mounting configuration provides mechanical stability in vibration-prone environments typical of industrial machinery and automotive systems.
Application Versatility
The STF6N60M2's performance profile makes it particularly effective in various power conversion topologies:
- Switch-mode power supplies (SMPS)
- Industrial motor drives and inverters
- Automotive power systems
- Uninterruptible power supply (UPS) systems
- Renewable energy converters
In power supply designs, its low conduction losses enable higher efficiency at light loads, while its fast switching characteristics reduce electromagnetic interference (EMI). For motor control applications, the device's avalanche energy rating ensures reliable operation in regenerative braking scenarios.
Technical Innovation in Power Semiconductor Design
STMicroelectronics' MDmesh II Plus technology represents a significant advancement in super-junction MOSFET architecture. By optimizing the charge balance between the drift region and body diode characteristics, this technology achieves unprecedented performance in both static and dynamic operating conditions. The result is a device that maintains low conduction losses while minimizing switching losses through optimized gate charge parameters.
The STF6N60M2's design incorporates advanced packaging techniques that reduce parasitic inductance while maintaining excellent thermal conductivity. This combination of silicon and package innovation enables designers to create more compact power systems with improved energy efficiency, meeting the evolving demands of modern electronics across multiple industry sectors.
Tags: N-Channel MOSFET, Power Transistor, STMicroelectronics IC, Industrial Electronics, TO-220FP