STMicroelectronics STF33N60M2 MDmesh™ II Plus N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STF33N60M2
- Availability: In Stock
$0.90
- Ex Tax: $0.90
STMicroelectronics STF33N60M2 MDmesh™ II Plus: High-Performance Power MOSFET
STMicroelectronics' STF33N60M2 MDmesh™ II Plus series represents the pinnacle of high-voltage N-channel MOSFET technology, delivering exceptional power efficiency and reliability for industrial and automotive applications. This advanced semiconductor device combines cutting-edge design with robust packaging to meet the demanding requirements of modern power electronics systems.
Technical Specifications & Features
Engineered for high-voltage operations, the STF33N60M2 offers a 600V drain-source voltage rating with a continuous drain current capacity of 26A at 25°C. Its optimized Rds(on) of 125mΩ at 13A ensures minimal conduction losses, while the 45.5nC gate charge enables fast switching performance. The device's ±25V gate voltage tolerance provides enhanced operational flexibility, and its 1781pF input capacitance at 100V supports stable high-frequency operations.
The TO-220FP package with through-hole mounting configuration ensures excellent thermal dissipation, maintaining 35W power dissipation at operating temperatures ranging from -55°C to 150°C. The integrated MDmesh™ II Plus technology reduces on-resistance by 20% compared to previous generations while maintaining superior avalanche energy ratings.
| Parameter | Value |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 26A |
| Rds(on) | 125mΩ |
| Gate Charge | 45.5nC |
Applications & Advantages
Designed for power conversion systems requiring high efficiency and compact form factors, the STF33N60M2 excels in motor drives, power supplies, and automotive electronics. Its low switching losses enable higher frequency operation in DC-DC converters, while the enhanced thermal performance ensures reliability in high-temperature environments. The device's robust design reduces electromagnetic interference (EMI) and improves system longevity in demanding applications.
Compared to standard MOSFETs, the MDmesh™ II Plus technology provides 15% improvement in switching efficiency and 30% better thermal conductivity. The device complies with RoHS standards and automotive AEC-Q101 qualifications, making it suitable for both industrial and vehicular systems.
Design Considerations
When implementing the STF33N60M2 in circuit designs, engineers should consider its 4V gate threshold voltage for optimal driver compatibility. The 10V drive voltage recommendation ensures full enhancement while maintaining safe operating limits. For parallel configurations, proper PCB layout techniques should be employed to balance current distribution and thermal management.
This power MOSFET's combination of high voltage capability, low on-resistance, and advanced packaging makes it an ideal choice for next-generation power electronics requiring both performance and reliability in harsh operating conditions.
Tags: Power Electronics, High Voltage Devices, Industrial Semiconductors, Automotive Electronics, Switching Components