STMicroelectronics STF19NM50N N-Channel MOSFET 500V 14A TO-220FP

STMicroelectronics STF19NM50N N-Channel MOSFET 500V 14A TO-220FP

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STMicroelectronics STF19NM50N N-Channel MOSFET: The Ultimate Power Management Solution

Engineered for high-performance power applications, the STF19NM50N from STMicroelectronics represents the pinnacle of MOSFET technology. This N-channel power transistor combines advanced MDmesh™ II technology with robust design features to deliver exceptional efficiency and reliability in industrial and commercial systems. Whether you're designing power supplies, motor drives, or renewable energy systems, this 500V, 14A device provides the critical performance characteristics needed for modern electronics.

Advanced Technical Specifications

At its core, the STF19NM50N boasts a remarkable set of specifications that make it ideal for demanding applications. With a 500V drain-source voltage rating and 14A continuous drain current capacity, this TO-220FP packaged device operates with remarkable efficiency even under extreme conditions. Its 250mΩ maximum Rds(on) at 7A and 10V gate-source voltage ensures minimal conduction losses, while the 34nC gate charge at 10V enables fast switching transitions.

The device's thermal performance is equally impressive, featuring a 30W power dissipation rating at 25°C and a maximum operating temperature of 150°C. This thermal resilience, combined with ±25V gate-source voltage tolerance, makes it suitable for harsh environments where temperature fluctuations are common.

ParameterSpecification
Drain-Source Voltage (Vdss)500 V
Continuous Drain Current (Id)14A @ 25°C
Rds(on) Max250mΩ @ 7A, 10V
Gate Charge (Qg)34 nC @ 10V
Operating Temperature150°C (TJ)
Superior Performance Features

What truly sets the STF19NM50N apart is its implementation of STMicroelectronics' proprietary MDmesh™ II technology. This innovative approach to MOSFET design significantly reduces on-resistance while maintaining excellent switching characteristics. The device's 1000pF input capacitance at 50V ensures stable operation in high-frequency applications, while the 4V gate threshold voltage (at 250µA) enables precise control in various circuit configurations.

The TO-220FP package offers exceptional thermal dissipation capabilities, making it ideal for through-hole mounting in power-intensive applications. This full-pack configuration provides mechanical stability while maintaining excellent electrical connectivity for demanding industrial environments.

Applications and System Benefits

This versatile N-channel MOSFET finds application in a wide range of systems including:

  • Switching power supplies (SMPS)
  • Motor control and drives
  • Solar inverters and energy conversion systems
  • Industrial automation equipment
  • Uninterruptible power supplies (UPS)

Its combination of high voltage capability, low conduction losses, and robust thermal performance makes it particularly valuable in designs requiring both efficiency and reliability. The device's 10V drive voltage compatibility ensures seamless integration with standard gate drivers, simplifying circuit design while maintaining optimal performance.

Design Advantages

Engineers choosing the STF19NM50N benefit from several key advantages. The device's minimal package inductance improves switching performance, while its avalanche energy rating ensures reliable operation in inductive switching applications. The through-hole mounting configuration provides mechanical durability, making it suitable for environments with vibration or mechanical stress.

When compared to similar devices in its class, the STF19NM50N demonstrates superior performance in critical areas:

FeatureSTF19NM50NTypical Competitor
Rds(on) Max250mΩ320mΩ
Qg at 10V34nC42nC
Power Dissipation30W25W
Operating Temp150°C125°C

This performance edge translates directly into system-level benefits including reduced energy consumption, smaller heatsink requirements, and improved long-term reliability.

Conclusion

The STF19NM50N from STMicroelectronics stands as a testament to the company's commitment to power semiconductor innovation. With its advanced MDmesh™ II technology, robust TO-220FP packaging, and superior electrical characteristics, this N-channel MOSFET delivers the performance demanded by today's power electronics engineers. Whether you're developing industrial equipment, renewable energy systems, or high-efficiency power supplies, this device offers the perfect balance of voltage capability, current handling, and switching efficiency to meet your design challenges.

Tags: Power Transistors, Industrial Electronics, Semiconductor Devices, Voltage Regulators, Electronic Components

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