STMicroelectronics STD9NM50N N-Channel MOSFET | 500V 5A DPAK Power Transistor

STMicroelectronics STD9NM50N N-Channel MOSFET: High-Performance Power Transistor for Demanding Applications

Engineered for excellence in power management systems, the STMicroelectronics STD9NM50N N-Channel MOSFET represents a perfect blend of advanced semiconductor technology and robust design. As part of ST's renowned MDmesh™ II series, this 500V 5A DPAK transistor delivers exceptional performance in industrial, automotive, and high-voltage applications where reliability and efficiency are paramount.

Key Features and Technical Specifications

At the heart of the STD9NM50N lies its innovative Power MOSFET architecture, featuring a maximum drain-source voltage (Vdss) of 500V and a continuous drain current capacity of 5A at 25°C. This device maintains exceptional performance with an Rds(on) of just 790mΩ at 2.5A and 10V gate-source voltage, ensuring minimal conduction losses in power conversion circuits. The advanced technology behind this transistor allows for efficient thermal management, with a maximum power dissipation rating of 45W at case temperature.

The device's gate characteristics stand out with a maximum gate charge (Qg) of 14nC at 10V, enabling fast switching capabilities while maintaining stability. With a gate-source voltage range of ±25V and a threshold voltage (Vgs(th)) of 4V at 250µA, the transistor offers precise control in various power regulation scenarios. Its input capacitance of 570pF at 50V ensures optimal performance in high-frequency applications.

Applications in Industrial and Power Electronics

This versatile power transistor finds applications across diverse industries, including:

• Industrial power supplies and converters
• Motor control and drive systems
• Lighting ballasts and control circuits
• Home appliance power management systems
• Renewable energy systems (solar inverters, etc.)

The DPAK surface-mount package with TO-252-3 configuration enables efficient heat dissipation while maintaining compatibility with standard PCB assembly processes. This makes the STD9NM50N particularly suitable for space-constrained designs requiring high power density.

Advanced MDmesh™ II Technology for Enhanced Efficiency

STMicroelectronics' proprietary MDmesh™ II technology forms the foundation of this transistor's superior performance. This innovative approach to power MOSFET design significantly reduces switching losses while maintaining excellent on-state resistance characteristics. The technology's optimized cell structure enhances avalanche ruggedness, making the device more resilient in harsh operating conditions.

Key benefits of MDmesh™ II technology include:

• Improved energy efficiency in power conversion
• Enhanced thermal stability
• Superior short-circuit withstand capability
• Consistent performance over extended temperature ranges

Reliable Performance and Thermal Management

The transistor's design excels in thermal performance, with an operating junction temperature rating of 150°C. This exceptional thermal resilience allows the device to maintain reliable operation in demanding environments. The surface-mount DPAK packaging facilitates efficient heat transfer to the PCB, eliminating the need for additional mechanical supports in most applications.

With its active product status and tape-and-reel packaging configuration, the STD9NM50N ensures consistent supply chain availability for high-volume manufacturing applications. The device complies with industry-standard quality certifications, guaranteeing long-term reliability in mission-critical systems.

Comprehensive Technical Parameters

Why Choose the STD9NM50N for Your Power Electronics Design?

As a leading manufacturer of semiconductor solutions, STMicroelectronics has built a reputation for delivering components that combine performance, reliability, and innovation. The STD9NM50N N-Channel MOSFET exemplifies this commitment through its advanced technical specifications, robust construction, and versatile applicability across multiple industries.

Design engineers appreciate the transistor's balance of high-voltage capability and manageable gate drive requirements, making it suitable for both traditional and emerging power electronics applications. The device's compliance with modern manufacturing standards ensures seamless integration into automated production environments.

Whether you're developing industrial power supplies, motor control systems, or renewable energy converters, the STMicroelectronics STD9NM50N provides the performance characteristics needed to create efficient, reliable, and cost-effective solutions. Its combination of high voltage rating, moderate current capacity, and advanced packaging technology makes it an ideal choice for designers seeking to optimize their power electronics implementations.

Tags: Power Transistors, Industrial Electronics, Semiconductor Devices, Electrical Components, Electronic Modules