STMicroelectronics STD5NK60ZT4 SuperMESH™ N-Channel MOSFET

STMicroelectronics STD5NK60ZT4 SuperMESH™ N-Channel MOSFET

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STMicroelectronics STD5NK60ZT4: High-Performance N-Channel MOSFET for Demanding Applications

The STMicroelectronics STD5NK60ZT4 is a high-voltage N-Channel MOSFET designed for power conversion systems requiring robust performance and efficiency. As part of the SuperMESH™ series, this device combines advanced trench technology with optimized thermal management to deliver superior electrical characteristics in a compact DPAK package. With a 600 V drain-source voltage rating and a continuous drain current capability of 5A, this MOSFET is engineered for applications where reliability and power density are critical.

Key Technical Specifications

The STD5NK60ZT4 features a maximum RDS(on) of 1.6Ω at 2.5A and 10V gate-source voltage, ensuring minimal conduction losses. Its advanced gate charge characteristics (34 nC at 10V) enable fast switching performance, while the ±30V gate-source voltage tolerance provides design flexibility. The device maintains stable operation across extreme temperatures (-55°C to 150°C) and incorporates 690 pF input capacitance for controlled switching dynamics.

ParameterValue
Drain-Source Voltage (Vdss)600 V
Continuous Drain Current (Id)5A (Tc)
RDS(on) Max1.6Ω @ 2.5A, 10V
Gate Charge (Qg)34 nC @ 10V
Advanced Design Features

Engineered with STMicroelectronics' proprietary SuperMESH™ technology, this MOSFET offers exceptional avalanche energy resistance and reduced on-state resistance. The DPAK surface-mount package (TO-252-3) enables efficient heat dissipation while maintaining compatibility with automated assembly processes. Its 90W power dissipation rating (at Tc) ensures reliable operation in high-temperature environments, making it ideal for industrial power supplies, motor control systems, and renewable energy inverters.

While designated as "Not For New Designs" by the manufacturer, the STD5NK60ZT4 remains a valuable solution for maintenance and replacement scenarios requiring proven performance in established systems. The device's tape-and-reel packaging (TR) facilitates seamless integration into high-volume production workflows.

Performance Advantages

This MOSFET excels in applications demanding precise power control and thermal stability. Its 4.5V gate threshold voltage enables efficient driver compatibility, while the 600V breakdown voltage rating supports high-voltage circuit designs. The combination of low output capacitance (400 pF @ 25V) and optimized switching characteristics makes it particularly suitable for:

  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supply (UPS) systems
  • Industrial motor drives
  • Lighting ballasts
  • Solar inverters

As a member of STMicroelectronics' legacy product portfolio, the STD5NK60ZT4 continues to provide reliable performance for engineers maintaining existing designs. Its comprehensive protection features include built-in avalanche ruggedness and thermal shutdown capabilities, ensuring long-term system reliability even under challenging operating conditions.

Tags: Power Electronics, Semiconductor Devices, Industrial Components, Electronic Parts, Electrical Engineering

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