STMicroelectronics STD5NK40Z-1 SuperMESH™ N-Channel MOSFET 400V 3A IPAK

Advanced Power Management with STMicroelectronics STD5NK40Z-1 SuperMESH™ MOSFET

The STMicroelectronics STD5NK40Z-1 represents the cutting-edge of power semiconductor technology, combining robust performance with exceptional reliability. As part of the renowned SuperMESH™ family, this N-channel MOSFET delivers optimized efficiency for demanding applications in industrial automation, power supplies, and motor control systems. Its advanced design ensures minimal power loss while maintaining exceptional thermal stability, making it ideal for high-frequency switching operations.

Key Performance Characteristics

Engineered for high-voltage applications, this device features a remarkable 400V drain-source voltage rating combined with a continuous drain current capacity of 3A. The innovative SuperMESH™ technology enables an ultra-low on-resistance of just 1.8Ω maximum at 1.5A and 10V gate-source voltage, significantly reducing conduction losses. With a maximum gate charge of 17nC at 10V, the STD5NK40Z-1 achieves rapid switching transitions while maintaining excellent thermal performance through its TO-251 (IPAK) through-hole package capable of dissipating up to 45W.

The device's rugged construction provides exceptional tolerance to extreme operating conditions, with guaranteed operation across the industrial temperature range of -55°C to 150°C. Its ±30V gate-source voltage rating offers enhanced design flexibility while maintaining robust short-circuit protection. The integrated body diode with fast recovery characteristics further improves system reliability in inductive load applications.

Design Advantages

Engineers benefit from the device's optimized electrical characteristics that simplify circuit design while maximizing system efficiency. The low input capacitance of 305pF at 25V enables minimal driver requirements, reducing overall system complexity. The device's threshold voltage of 4.5V at 50µA ensures stable operation across varying temperature conditions while maintaining compatibility with standard logic-level gate drives.

Manufacturers appreciate the TO-251AA package's mechanical durability and excellent thermal management capabilities. The through-hole mounting configuration provides superior mechanical stability for applications requiring vibration resistance. This combination of electrical and mechanical attributes makes the STD5NK40Z-1 particularly suitable for demanding environments in consumer electronics, industrial machinery, and automotive systems.

Comprehensive Applications

This versatile MOSFET excels in various power conversion applications including:

• Switching power supplies and DC-DC converters
• Motor drives and actuator control systems
• Industrial automation equipment
• Home appliance power management
• Renewable energy system components

Its combination of high voltage capability, low on-resistance, and robust thermal performance makes it particularly effective in designs requiring compact form factors with high power density. The device's inherent reliability extends system lifespans while reducing maintenance requirements in critical applications.

Technical Excellence

The SuperMESH™ technology employed in this device represents a breakthrough in power MOSFET design. By optimizing the cell structure and reducing parasitic capacitances, STMicroelectronics has achieved a remarkable balance between switching speed and conduction losses. This technological advancement enables designers to create more efficient power systems while maintaining exceptional reliability margins.

Quality assurance is maintained through rigorous testing procedures, ensuring each device meets the stringent requirements of modern electronics manufacturing. The active product status and comprehensive datasheet support guarantee long-term design viability and easy integration with existing systems.

Tags: Power MOSFET, N-Channel Transistor, TO-251 Package, High Voltage FET, Industrial Electronics