STMicroelectronics STD4NK100Z N-Channel MOSFET 1000V 2.2A DPAK
- Brand: STMicroelectronics
- Product Code: STD4NK100Z
- Availability: In Stock
$0.85
- Ex Tax: $0.85
High-Performance N-Channel MOSFET for Demanding Applications
STMicroelectronics continues to set industry standards with its STD4NK100Z N-Channel MOSFET, a high-voltage power transistor engineered for automotive and industrial applications requiring exceptional reliability and efficiency. This advanced MOSFET combines robust technical specifications with innovative SuperMESH™ technology to deliver optimal performance in high-voltage switching scenarios.
Technical Excellence in Power Management
Rated for an impressive 1000V drain-source voltage (Vdss), the STD4NK100Z demonstrates exceptional voltage handling capabilities while maintaining a continuous drain current rating of 2.2A at 25°C. Its optimized Rds(on) of 6.8Ω at 1.1A and 10V gate-source voltage ensures minimal conduction losses, making it ideal for power conversion systems where thermal efficiency is critical.
| Parameter | Specification |
|---|---|
| Max Voltage | 1000V |
| Continuous Current | 2.2A |
| Package Type | DPAK |
| Gate Charge | 18nC |
Automotive-Grade Reliability
Built to meet stringent automotive standards, this AEC-Q101 qualified device features a rugged DPAK surface-mount package that facilitates efficient heat dissipation. With operating temperature tolerance from -55°C to 150°C, the MOSFET maintains stable performance across extreme environmental conditions. The ±30V gate-source voltage protection adds an extra layer of robustness against voltage transients.
Engineers will appreciate the device's 601pF input capacitance and 4.5V maximum gate threshold voltage, which enable fast switching speeds while minimizing drive circuit complexity. These characteristics make the STD4NK100Z particularly well-suited for automotive power systems, industrial motor controls, and high-voltage DC-DC converters.
Design Advantages
The SuperMESH™ technology employed in this MOSFET offers significant advantages over conventional power transistors. Its advanced trench structure reduces on-resistance while maintaining excellent avalanche energy ratings. The through-hole DPAK package with its exposed tab provides enhanced thermal performance, allowing designers to create more compact power solutions without compromising reliability.
As part of STMicroelectronics' comprehensive power management portfolio, this device integrates seamlessly with complementary components in battery management systems, electric vehicle charging infrastructure, and renewable energy systems. The 90W power dissipation rating (at case temperature) enables operation in high-stress environments while maintaining long-term reliability.
Tags: N-Channel MOSFET, High-Voltage Transistor, Automotive Electronics, Power Management, Surface Mount FET