STMicroelectronics STD13NM60N MOSFET N-Channel 600V 11A DPAK
- Brand: STMicroelectronics
- Product Code: STD13NM60N
- Availability: In Stock
$0.72
- Ex Tax: $0.72
High-Performance Power MOSFET for Demanding Applications
STMicroelectronics continues to set industry standards with its STD13NM60N MOSFET, a cutting-edge N-channel transistor engineered for high-voltage, high-current applications. This advanced component belongs to the renowned MDmesh™ II series, combining ST's proprietary technology with exceptional electrical characteristics to deliver reliable performance in power management systems.
Key Specifications & Technical Advantages
Operating at an impressive 600V rating, the STD13NM60N demonstrates remarkable robustness while maintaining efficient power delivery. Its 11A continuous drain current capability at 25°C makes it suitable for demanding industrial applications requiring both high voltage tolerance and substantial current handling. The device's 360mΩ maximum RDS(on) at 5.5A and 10V gate-source voltage ensures minimal conduction losses, translating to improved system efficiency and reduced thermal management requirements.
With a gate charge (Qg) of 30nC at 10V, this MOSFET offers rapid switching performance while maintaining excellent thermal stability. The ±25V gate-source voltage rating provides enhanced protection against voltage spikes, while the 790pF input capacitance (Ciss) at 50V ensures predictable high-frequency behavior. These specifications make it ideal for applications in power supplies, motor control systems, and industrial automation equipment.
| Parameter | Value |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 11A |
| RDS(on) | 360mΩ |
| Gate Charge | 30nC |
| Operating Temp | 150°C |
Industrial-Grade Reliability
Manufactured using STMicroelectronics' proven MDmesh™ II technology, the STD13NM60N features enhanced avalanche ruggedness and improved thermal dissipation characteristics. The DPAK surface-mount package (TO-252-3) provides excellent mechanical stability while maintaining compatibility with automated PCB assembly processes. With a maximum power dissipation of 90W at case temperature, this device maintains reliable operation even under extreme working conditions.
The transistor's 4V gate threshold voltage (at 250µA) ensures compatibility with standard logic-level drivers while maintaining noise immunity. Its 25000-unit packaging configuration in tape & reel format facilitates efficient inventory management and automated component placement in high-volume manufacturing environments.
Design Versatility
This N-channel MOSFET's combination of high voltage capability and moderate on-resistance makes it particularly suitable for:
- Switch-mode power supplies (SMPS)
- Motor drive inverters
- Industrial lighting systems
- Uninterruptible power supplies (UPS)
- Power factor correction (PFC) circuits
The device's surface-mount design enables compact system layouts while maintaining excellent thermal performance through proper PCB copper planning. Its compliance with RoHS and REACH environmental standards makes it suitable for modern green electronics manufacturing.
Technical Support & Implementation
As part of STMicroelectronics' comprehensive power management portfolio, the STD13NM60N benefits from extensive technical resources including SPICE models, thermal simulation tools, and application-specific design guides. Engineers can leverage ST's comprehensive ecosystem to optimize performance in their specific applications, ensuring reliable operation across the full operating temperature range from -55°C to 150°C.
Tags: Power MOSFET, Industrial Transistor, Surface Mount Device, High Voltage Switch, Electronic Component