STMicroelectronics STD12N60M2 N-Channel MOSFET | 600V 9A Power Transistor
- Brand: STMicroelectronics
- Product Code: STD12N60M2
- Availability: In Stock
$4.00
- Ex Tax: $4.00
STMicroelectronics STD12N60M2 MDmesh™ M2 Series N-Channel MOSFET
The STMicroelectronics STD12N60M2 represents the latest advancement in power transistor technology from the renowned MDmesh™ M2 series. This N-channel MOSFET combines cutting-edge silicon innovation with industrial-grade reliability, delivering exceptional performance in high-voltage switching applications. With its 600V blocking capability and optimized on-resistance characteristics, this device sets new benchmarks for efficiency and thermal management in power electronics systems.
Key Technical Specifications
Engineered for demanding power conversion applications, the STD12N60M2 features a maximum drain-source voltage (VDSS) of 600V paired with a continuous drain current capacity of 9A. The device achieves an impressive 450mΩ maximum on-resistance at 4.5A current and 10V gate-source voltage, significantly reducing conduction losses. Its optimized gate charge (Qg) of 16nC at 10V drive voltage enables fast switching transitions while maintaining excellent thermal stability.
| Parameter | Value |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 9A |
| RDS(on) | 450mΩ |
| Gate Charge | 16nC |
| Operating Temp | 150°C |
Advanced Design Features
Utilizing STMicroelectronics' proprietary MDmesh™ M2 technology, this power transistor incorporates a unique cellular structure that minimizes electric field concentration while maximizing current density. The surface-mount DPAK package (TO-252-3) combines compact form factor with excellent thermal dissipation through its exposed tab design. With ±25V gate-source voltage tolerance and 538pF input capacitance at 100V drain-source voltage, the device maintains stable operation across diverse environmental conditions.
The transistor's 85W maximum power dissipation rating (at case temperature) enables reliable operation in high-frequency switching applications up to 150°C junction temperature. Its 4V gate threshold voltage (at 250µA) ensures compatibility with standard logic-level drivers while maintaining excellent noise immunity. These characteristics make it particularly suitable for industrial power supplies, motor control systems, and renewable energy conversion applications.
Performance Advantages
Compared to conventional power MOSFETs in similar voltage classes, the STD12N60M2 demonstrates superior energy efficiency through its reduced switching losses and optimized thermal resistance. The combination of low on-resistance and controlled gate charge enables designers to achieve higher switching frequencies without compromising system reliability. Its surface-mount packaging facilitates automated assembly while maintaining robust mechanical stability in demanding operating environments.
Tags: Power Electronics, MOSFET Technology, Industrial Components, Energy Efficiency, Semiconductor Devices