STMicroelectronics STD11NM65N N-Channel MOSFET 650V 11A DPAK
- Brand: STMicroelectronics
- Product Code: STD11NM65N
- Availability: In Stock
$0.80
- Ex Tax: $0.80
High-Performance Power Management with STMicroelectronics STD11NM65N
In the evolving landscape of power electronics, the STMicroelectronics STD11NM65N emerges as a groundbreaking solution designed to meet the rigorous demands of modern applications. This N-Channel MOSFET, engineered with advanced MDmesh™ II technology, combines exceptional voltage handling capabilities with efficient thermal management. As industries transition towards more compact and energy-efficient systems, the STD11NM65N's 650V rating and 11A continuous drain current position it as an ideal choice for high-voltage switching applications in automotive, industrial automation, and renewable energy systems.
Technical Excellence in Compact Packaging
Encased in a surface-mount DPAK (TO-252-3) package, this device delivers remarkable performance metrics that redefine power density standards. The 455mΩ maximum RDS(on) at 10V gate drive ensures minimal conduction losses, while the 29nC gate charge rating enables rapid switching transitions. Its ±25V gate voltage tolerance provides enhanced reliability in demanding environments, and the integrated thermal protection features allow operation at junction temperatures up to 150°C without performance degradation.
Designed for modern power architectures, the STD11NM65N's 800pF input capacitance optimizes high-frequency operation in switching power supplies and motor control circuits. The device's 110W power dissipation capability, coupled with its compact form factor, enables engineers to develop space-constrained solutions without compromising performance. This balance between electrical characteristics and physical design makes it particularly valuable in applications requiring both high-voltage operation and efficient thermal dissipation.
| Parameter | Value |
|---|---|
| Max Voltage | 650V |
| Continuous Drain Current | 11A |
| RDS(on) Max | 455mΩ |
| Gate Charge | 29nC |
| Operating Temperature | 150°C |
Advanced Features for Critical Applications
The STD11NM65N's design incorporates STMicroelectronics' proprietary MDmesh™ II technology, which significantly reduces on-resistance while maintaining robust avalanche energy ratings. This innovation translates to improved system efficiency and reliability in applications such as solar inverters, electric vehicle charging systems, and industrial motor drives. The device's 250µA threshold voltage of 4V ensures compatibility with standard logic-level gate drivers, simplifying circuit design while maintaining optimal performance.
Manufacturers benefit from the device's tape-and-reel packaging format that streamlines automated assembly processes. The RoHS-compliant DPAK package combines the thermal advantages of its metal tab with the space-saving benefits of surface-mount technology. These features make the STD11NM65N particularly well-suited for applications requiring high reliability under thermal stress cycles, including automotive power systems and industrial control modules.
As power system designers face increasing pressure to improve energy efficiency while reducing form factors, the STD11NM65N offers a compelling solution. Its combination of high-voltage capability, low on-resistance, and compact packaging enables the development of next-generation power supplies, LED lighting systems, and smart grid components. The device's robust construction and proven reliability in harsh environments further enhance its value proposition across multiple industries.
Tags: Power Electronics, Surface Mount, High Voltage, Industrial Automation, Energy Efficiency