STMicroelectronics STB23NM60ND MOSFET N-Channel 600V 19.5A D2PAK
- Brand: STMicroelectronics
- Product Code: STB23NM60ND
- Availability: In Stock
$2.90
- Ex Tax: $2.90
Advanced Power Management with STB23NM60ND MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its FDmesh™ II series, where the STB23NM60ND N-Channel MOSFET emerges as a robust solution for high-voltage applications. Engineered to deliver superior performance in industrial, automotive, and energy-efficient systems, this D2PAK packaged transistor combines cutting-edge technology with reliable thermal management capabilities.
Key Technical Specifications
At the heart of the STB23NM60ND's performance lies its 600 V drain-source voltage rating, which positions it as an ideal choice for demanding power conversion scenarios. With a continuous drain current of 19.5A at 25°C and a remarkably low Rds(on) of 180mΩ at 10A, this MOSFET minimizes conduction losses while maintaining exceptional switching efficiency. The device's advanced gate charge characteristics (70 nC @ 10V) ensure fast transitions, making it suitable for high-frequency operations in power supplies and motor control systems.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600 V |
| Continuous Drain Current | 19.5A |
| Rds(on) Max | 180mΩ @ 10A |
| Gate Charge | 70 nC @ 10V |
| Operating Temperature | 150°C (TJ) |
Thermal Performance & Packaging
The TO-263AB (D²Pak) surface-mount package enhances thermal dissipation through its optimized leadframe design, allowing the device to maintain 150W power dissipation at case temperature. This thermal efficiency, combined with ±25V gate-source voltage tolerance, ensures stable operation in harsh environments. The 2050 pF input capacitance at 50V further contributes to its ability to handle rapid voltage transitions without compromising reliability.
Industrial & Automotive Applications
Engineers designing industrial power supplies, automotive motor drives, or renewable energy systems will find the STB23NM60ND particularly advantageous. Its 19.5A current rating makes it suitable for high-power DC-DC converters, while the 5V gate threshold voltage enables seamless integration with standard logic circuits. The device's robustness against thermal runaway, supported by its advanced FDmesh™ II technology, proves crucial in maintaining system stability under varying load conditions.
Design Advantages
Compared to conventional MOSFETs, this device offers significant improvements in energy efficiency. The combination of low on-resistance and optimized switching characteristics reduces total power loss by up to 22% in typical applications. Its surface-mount design facilitates automated assembly processes, while the tape-and-reel packaging ensures reliable handling in high-volume production environments. These features collectively contribute to extended system lifespan and reduced maintenance requirements.
Future-Proof Power Solutions
Though categorized as 'Obsolete' in newer product lines, the STB23NM60ND remains a preferred choice for legacy systems requiring proven reliability. Its specifications align with modern energy efficiency standards, making it a viable option for industrial equipment modernization projects. When integrated with appropriate heat sinking solutions, this MOSFET continues to deliver the performance needed for next-generation power architectures.
Tags: Power MOSFET, Industrial Electronics, Automotive Components, Surface Mount Transistor, High Voltage Transistor