STMicroelectronics STB20N65M5 MOSFET N-Channel 650V 18A D²PAK
- Brand: STMicroelectronics
- Product Code: STB20N65M5
- Availability: In Stock
$1.10
- Ex Tax: $1.10
High-Performance Power MOSFET for Demanding Applications
The STMicroelectronics STB20N65M5 is a cutting-edge N-Channel Power MOSFET engineered to deliver exceptional performance in high-voltage and high-current applications. Part of ST's advanced MDmesh™ V series, this device combines innovative technology with robust design to provide reliable switching efficiency and thermal stability for modern power electronics systems.
Key Specifications and Features
This 650V MOSFET offers a continuous drain current rating of 18A at 25°C, making it ideal for demanding industrial and consumer applications. Its optimized RDS(on) of 190mΩ at 9A/10V ensures minimal conduction losses, while the 36nC gate charge (Qg) at 10V enables fast switching performance. The device's ±25V gate voltage rating and 5V VGS(th) specification provide excellent compatibility with standard gate drivers.
| Parameter | Value |
|---|---|
| Max Voltage | 650V |
| Continuous Current | 18A |
| RDS(on) | 190mΩ |
| Gate Charge | 36nC |
| Package | D²PAK (TO-263) |
Advanced Technology for Modern Electronics
Featuring STMicroelectronics' proprietary MDmesh™ V technology, the STB20N65M5 delivers superior avalanche ruggedness and enhanced thermal management capabilities. The device's 1434pF input capacitance at 100V ensures stable operation in high-frequency switching circuits, while its 130W power dissipation rating (Tc) supports reliable performance under heavy loads. The surface-mount D²PAK packaging combines with industry-standard TO-263-3 pinout compatibility for easy integration into modern PCB designs.
This N-Channel MOSFET excels in applications requiring high efficiency and compact form factors. Its optimized switching characteristics make it particularly suitable for: power supplies, motor control systems, solar inverters, and industrial automation equipment. The device's 150°C operating temperature rating ensures reliable performance in demanding thermal environments.
Design Advantages
Engineers will appreciate the STB20N65M5's balanced performance characteristics: The 10V drive voltage compatibility ensures optimal RDS(on) performance while maintaining compatibility with standard gate drivers. The device's high current capability combined with its compact surface-mount package enables the creation of space-efficient power solutions without compromising performance.
Available in tape-and-reel packaging for automated assembly processes, this RoHS-compliant component offers both technical excellence and manufacturing flexibility. With its combination of high voltage capability, low on-resistance, and robust thermal design, the STB20N65M5 represents a significant advancement in power MOSFET technology for modern electronic systems.
Tags: Power MOSFET, High Voltage Transistor, Surface Mount Device, STMicroelectronics Components, Electronic Components