STMicroelectronics STB13N80K5 MOSFET N-Channel 800V 12A D²PAK
- Brand: STMicroelectronics
- Product Code: STB13N80K5
- Availability: In Stock
$1.20
- Ex Tax: $1.20
Revolutionizing Power Management with STMicroelectronics STB13N80K5
In the ever-evolving landscape of power electronics, the STMicroelectronics STB13N80K5 MOSFET emerges as a groundbreaking solution designed to meet the rigorous demands of modern industrial and automotive applications. As part of the renowned SuperMESH5™ family, this N-Channel transistor combines cutting-edge technology with exceptional performance metrics, offering engineers unparalleled efficiency and reliability in a compact D²PAK package.
Engineered for high-voltage environments, the STB13N80K5 delivers an impressive 800V drain-to-source voltage (Vdss) rating alongside a continuous drain current capacity of 12A. This remarkable combination enables seamless operation in power conversion systems where thermal stability and low conduction losses are paramount. The device's 450mΩ maximum Rds(on) at 6A and 10V gate-source voltage ensures minimal power dissipation, making it an ideal choice for switched-mode power supplies (SMPS), motor control units, and energy-efficient lighting systems.
Technical Excellence in Power Semiconductor Design
At the heart of this MOSFET lies STMicroelectronics' proprietary SuperMESH5™ technology, which optimizes the delicate balance between conduction and switching losses. The advanced silicon architecture achieves an impressive 29nC gate charge (Qg) at 10V drive voltage, enabling rapid switching transitions while maintaining thermal integrity. With a ±30V gate-source voltage (Vgs) rating and 5V Vgs(th) threshold at 100µA, the device offers robust gate protection while ensuring compatibility with standard driver circuits.
The thermal performance of the STB13N80K5 is equally impressive, with a 190W power dissipation capacity (Tc) that allows operation in demanding environments. The D²PAK (TO-263) surface-mount package combines mechanical durability with superior heat dissipation characteristics, making it suitable for applications requiring compliance with automotive-grade reliability standards.
| Parameter | Value |
|---|---|
| Max Vdss | 800 V |
| Continuous Drain Current | 12A @ 25°C |
| Rds(on) Max | 450mΩ @ 6A, 10V |
| Gate Charge | 29 nC @ 10 V |
| Operating Temperature | -55°C to 150°C (TJ) |
Applications and Design Flexibility
This versatile power transistor excels in a wide range of applications including:
- Industrial motor drives and variable frequency drives
- Automotive powertrain systems and onboard chargers
- Renewable energy inverters and battery management systems
- High-efficiency data center power supplies
Its surface-mount packaging simplifies PCB layout while maintaining thermal performance comparable to through-hole components. The device's 870 pF input capacitance (Ciss) at 100V Vds ensures stable operation in high-frequency switching environments, making it compatible with modern digitally controlled power systems.
Why Choose STB13N80K5?
When compared to conventional MOSFETs in similar voltage classes, the STB13N80K5 demonstrates significant advantages:
1. Enhanced Energy Efficiency: The combination of low Rds(on) and optimized gate charge reduces both conduction and switching losses by up to 15% compared to previous-generation devices.
2. Thermal Robustness: The advanced packaging technology maintains reliability even under sustained high-current conditions, with thermal resistance (Rthjc) values that outperform industry standards.
3. Design Simplicity: With its wide Vgs operating range and built-in avalanche energy ratings, the device simplifies circuit protection requirements while maintaining exceptional short-circuit withstand capability.
4. Environmental Compliance: As a RoHS-compliant component with halogen-free construction, it supports sustainable design practices without compromising performance.
Whether you're developing next-generation electric vehicle charging infrastructure or designing industrial automation equipment, the STB13N80K5 provides the perfect blend of performance, reliability, and design flexibility. Its Tape & Reel packaging ensures seamless integration into automated assembly processes, while the active product status guarantees long-term supply stability for production programs.
By choosing the STMicroelectronics STB13N80K5, engineers gain access to a power management solution that doesn't just meet today's requirements but anticipates tomorrow's challenges. This device represents the culmination of decades of semiconductor innovation, delivering the performance characteristics needed to push the boundaries of what's possible in modern power electronics design.
Tags: Power Electronics, Industrial Applications, Automotive Solutions, Surface Mount, High Voltage MOSFET