STP43N60DM2 MDmesh™ DM2 Series N-Channel MOSFET

STP43N60DM2 MDmesh™ DM2 Series N-Channel MOSFET

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Innovative Power Management with STP43N60DM2 MOSFET

Engineered for high-voltage applications, STMicroelectronics' STP43N60DM2 MOSFET represents the cutting-edge MDmesh™ DM2 technology. This N-channel power transistor combines exceptional electrical performance with robust thermal management, making it an ideal choice for designers seeking reliable solutions in industrial and consumer electronics. With its 600V rating and advanced package design, this component addresses the growing demand for compact, efficient power systems across various industries.

Technical Excellence in Power Transistor Design

The STP43N60DM2 showcases STMicroelectronics' commitment to innovation through its optimized parameters. Operating at 600V with a continuous drain current of 34A, this device maintains exceptional efficiency even under demanding conditions. The 93mΩ RDS(on) at 17A/10V ensures minimal conduction losses, while the 56nC gate charge rating enables fast switching performance. The TO-220 package with through-hole mounting provides excellent thermal dissipation capabilities, supporting the device's 250W power dissipation rating at the case temperature.

ParameterValue
VDSS600V
ID @25°C34A
RDS(on)93mΩ
Qg56nC
Ciss2500pF
Advanced Features for Modern Applications

Designed with modern power systems in mind, the STP43N60DM2 incorporates multiple performance-enhancing characteristics. Its ±25V gate voltage tolerance provides operational flexibility, while the 5V threshold voltage at 250µA ensures compatibility with standard driver circuits. The device's 2500pF input capacitance at 100V enables efficient high-frequency operation, and the industrial temperature range (-55°C to 150°C) guarantees reliability in extreme environments. These features collectively make it suitable for applications ranging from motor drives to renewable energy systems.

What truly distinguishes this MOSFET is its balance of performance and practicality. The through-hole mounting configuration simplifies PCB integration while maintaining mechanical stability. The tube packaging preserves device integrity during handling and storage, and the active product status assures long-term availability for production environments. Its MDmesh™ DM2 series designation reflects STMicroelectronics' ongoing development of advanced power semiconductor technologies.

Industrial Applications and System Benefits

This versatile component finds application in diverse fields including industrial automation, power supplies, and motor control systems. Its high voltage rating makes it particularly valuable in grid-connected applications, while the low on-resistance contributes to energy-efficient designs that meet modern regulatory standards. The device's thermal performance reduces the need for complex cooling solutions, thereby lowering overall system costs and improving reliability.

For design engineers, the STP43N60DM2 offers significant advantages. The combination of high current capability and fast switching characteristics enables compact power supply designs with improved efficiency. The device's ruggedness and wide operating temperature range make it suitable for challenging environments, while its compatibility with standard driver circuits simplifies implementation. These benefits translate to reduced development time and lower total cost of ownership for end-users.

Tags: Power MOSFET, High Voltage Transistor, Industrial Electronics, TO-220 Device, Energy Efficient Components

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