STMicroelectronics STF11NM50N MDmesh II N-Channel MOSFET | 500V 8.5A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF11NM50N
- Availability: In Stock
$0.70
- Ex Tax: $0.70
High-Performance STMicroelectronics STF11NM50N MDmesh II N-Channel MOSFET for Demanding Power Applications
Engineered for exceptional efficiency and reliability, the STMicroelectronics STF11NM50N MDmesh II N-Channel MOSFET represents the pinnacle of power semiconductor technology. This advanced device combines cutting-edge design with robust performance characteristics, making it an ideal choice for modern power management systems requiring high voltage tolerance and optimized switching capabilities.
Key Technical Advantages
At its core, the STF11NM50N features a 500V drain-source rating paired with an 8.5A continuous drain current capacity, delivering exceptional power handling in a compact TO-220FP package. The device's 470mΩ maximum RDS(on) at 4.5A and 10V gate-source voltage ensures minimal conduction losses, while its 19nC gate charge rating enables fast switching transitions with reduced energy consumption. This combination of parameters makes it particularly suitable for applications where thermal performance and energy efficiency are critical.
Designed with industrial-grade durability, this MOSFET maintains stable operation under extreme conditions with its ±25V gate voltage tolerance and 150°C maximum operating temperature. The integrated TO-220FP package provides excellent thermal dissipation characteristics through its through-hole mounting configuration, ensuring long-term reliability in demanding environments.
Parameter | Value |
---|---|
Drain-Source Voltage | 500V |
Continuous Drain Current | 8.5A |
RDS(on) | 470mΩ @ 4.5A, 10V |
Gate Charge | 19nC @ 10V |
Application Versatility
The STF11NM50N's advanced specifications make it suitable for a wide range of power electronics applications including industrial motor drives, renewable energy systems, and high-efficiency power supplies. Its MDmesh II technology provides superior performance in hard-switching applications while maintaining excellent thermal stability. The device's 547pF input capacitance at 50V enables efficient high-frequency operation, making it valuable for modern switching power converters requiring minimized switching losses.
Manufacturers benefit from simplified thermal management due to the device's 25W maximum power dissipation rating (at case temperature). This allows for more compact designs while maintaining operational reliability. The device's 250µA threshold voltage specification ensures compatibility with standard gate drive circuits while providing clear on/off state definition.
Quality and Reliability
As part of STMicroelectronics' MDmesh II series, the STF11NM50N undergoes rigorous quality control procedures to ensure compliance with industrial standards. The device's active status in the manufacturer's portfolio guarantees ongoing availability for production applications. Each unit is designed to meet the demanding requirements of modern power electronics while maintaining backward compatibility with existing TO-220FP footprint designs.
For design engineers, this MOSFET offers a compelling combination of performance, reliability, and design flexibility. Its technical specifications enable optimized power system designs that meet modern efficiency standards while maintaining cost-effectiveness. Whether used in industrial automation systems, power factor correction circuits, or motor control applications, the STF11NM50N delivers consistent, reliable performance under real-world operating conditions.
Tags: Power MOSFET, Industrial Electronics, Semiconductor Components, High Voltage Transistors, Through Hole Devices