STM STD4NK60ZT4 SuperMESH™ N-Channel MOSFET 600V 4A DPAK - STMicroelectronics
- Brand: STMicroelectronics
- Product Code: STD4NK60ZT4
- Availability: In Stock
$0.15
- Ex Tax: $0.15
High-Performance STM STD4NK60ZT4 SuperMESH™ N-Channel MOSFET for Demanding Power Applications
Engineered for superior performance in high-voltage power electronics, the STM STD4NK60ZT4 SuperMESH™ N-Channel MOSFET represents STMicroelectronics' commitment to innovation in semiconductor technology. This advanced 600V, 4A device combines cutting-edge SuperMESH™ technology with optimized thermal management to deliver exceptional efficiency and reliability across a wide range of industrial and consumer applications.
Key Features and Specifications
Designed with precision engineering, this surface-mount DPAK package MOSFET offers remarkable electrical characteristics. Operating at a maximum drain-source voltage of 600V, it maintains a low on-resistance of just 2Ω at 2A/10V gate drive. The device's advanced gate charge management (26nC @ 10V) enables fast switching performance while maintaining thermal stability up to 150°C operating temperature. Its robust construction features a ±30V gate voltage rating and 70W power dissipation capacity (Tc), making it ideal for demanding power conversion applications.
| Parameter | Value |
|---|---|
| Max Vdss | 600V |
| Continuous Id | 4A (Tc) |
| Rds(on) Max | 2Ω @ 2A, 10V |
| Gate Charge | 26nC @ 10V |
| Operating Temp | 150°C (TJ) |
Applications and Use Cases
Perfectly suited for modern power electronics systems, the STM STD4NK60ZT4 excels in switch-mode power supplies, motor control circuits, lighting ballasts, and industrial automation equipment. Its TO-252-3 (DPAK) package offers excellent thermal performance for surface-mount applications while maintaining compatibility with standard PCB assembly processes. The device's inherent reliability and rugged design make it particularly valuable in HVAC systems, power tools, and automotive electronics where longevity and consistent performance are critical.
Why Choose the STM STD4NK60ZT4?
STMicroelectronics' SuperMESH™ technology provides this MOSFET with a unique combination of low on-resistance, fast switching characteristics, and exceptional thermal management. Compared to conventional power MOSFETs, it delivers up to 20% lower conduction losses and improved avalanche energy ratings. The device's advanced packaging technology ensures reliable operation across demanding environmental conditions, while its RoHS-compliant construction supports modern eco-friendly design requirements. With a proven track record in challenging applications, this component offers engineers a trusted solution for next-generation power designs requiring compact form factors and high-efficiency performance.
Technical Advantages
The device's 510pF input capacitance (at 25V Vds) enables efficient gate drive control, while the 4.5V gate threshold voltage ensures compatibility with standard logic circuits. Its optimized parasitic capacitance characteristics improve switching performance in high-frequency applications, reducing both turn-on and turn-off losses. The integrated thermal protection features and robust die construction provide enhanced reliability under transient load conditions, making it particularly suitable for applications requiring consistent performance in varying operating environments.
Tags: Power Electronics, MOSFET Transistor, High Voltage MOSFET, Surface Mount Devices, Semiconductor Components