STL150N3LLH5 N-Channel MOSFET 30V 195A PowerFlat™ | STMicroelectronics
- Brand: STMicroelectronics
- Product Code: STL150N3LLH5
- Availability: In Stock
$6.00
- Ex Tax: $6.00
High-Performance Power MOSFET for Demanding Applications
STMicroelectronics continues to redefine power management efficiency with its STL150N3LLH5 N-Channel MOSFET, a cutting-edge component engineered for high-current applications requiring exceptional thermal performance and reliability. This 30V, 195A PowerFlat™ device combines advanced STripFET™ V technology with innovative packaging to deliver industry-leading specifications in a compact surface-mount form factor. Designed for automotive systems, industrial power supplies, and energy-efficient converters, this MOSFET represents the perfect balance between performance density and operational stability.
Technical Excellence in Power Electronics
At the heart of the STL150N3LLH5 lies STMicroelectronics' proprietary vertical DMOS process, optimized to achieve an unprecedented 1.75mΩ RDS(on) at 10V gate-source voltage. This exceptional on-resistance value enables minimal conduction losses, making it ideal for high-frequency switching applications where thermal management is critical. The device's 8-PowerVDFN package with exposed pad ensures efficient heat dissipation, supporting continuous drain currents up to 195A under optimal cooling conditions. With a maximum operating temperature range of -55°C to 150°C, this MOSFET maintains reliable performance in extreme environments.
Parameter | Value |
---|---|
Drain-Source Voltage (VDSS) | 30V |
Continuous Drain Current (ID) | 195A @ 25°C |
RDS(on) @ ID, VGS | 1.75mΩ @ 17.5A, 10V |
Gate Charge (Qg) | 40nC @ 4.5V |
Power Dissipation (Ptot) | 114W @ Case Temp |
Innovative Packaging for Enhanced Thermal Performance
The PowerFlat™ (5x6) package represents a significant advancement in power semiconductor packaging technology. This leadless design with direct thermal pad connection reduces thermal resistance to 1.7°C/W (junction-to-case), enabling efficient heat transfer to the PCB without requiring complex heatsink solutions. The 8-pin VDFN configuration provides excellent current distribution while maintaining compatibility with standard surface-mount assembly processes. The device's ±22V gate-source voltage rating offers enhanced protection against voltage spikes, ensuring long-term reliability in switching circuits.
Engineers will appreciate the device's 2.2V gate threshold voltage (VGS(th)) with tight process control, allowing precise gate drive optimization across various operating conditions. The integrated input capacitance of 5800pF at 25V VDS has been carefully balanced to minimize switching losses while maintaining robustness against dv/dt induced turn-on effects. These characteristics make the STL150N3LLH5 particularly suitable for synchronous rectification, motor control, and DC-DC conversion applications where switching efficiency is paramount.
Design Flexibility and Application Versatility
This N-channel MOSFET's combination of high current capability and low on-resistance opens new possibilities in power system design. Automotive engineers can leverage its performance for electric vehicle powertrains, battery management systems, and 48V mild hybrid architectures. Industrial designers will find it particularly valuable for server power supplies, uninterruptible power systems (UPS), and industrial motor drives where space constraints and thermal management are critical challenges.
The device's tape-and-reel packaging format ensures seamless integration with automated assembly lines, while its RoHS-compliant construction supports environmentally responsible manufacturing practices. Although currently marked as obsolete in production status, the STL150N3LLH5 remains a reference design for high-current power MOSFET applications, offering valuable insights into STMicroelectronics' approach to power density optimization.
Tags: Power MOSFET, Surface Mount Technology, High Current Transistors, Industrial Electronics