STMicroelectronics STL140N4LLF5 N-Channel MOSFET 40V 140A PowerFlat Package

STMicroelectronics STL140N4LLF5 N-Channel MOSFET 40V 140A PowerFlat Package

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High-Performance Power Management with STMicroelectronics STL140N4LLF5

Engineered for demanding power applications, the STMicroelectronics STL140N4LLF5 represents the pinnacle of MOSFET technology in the STripFET™ V series. This N-Channel power transistor combines cutting-edge design with robust performance metrics to deliver exceptional efficiency in automotive, industrial, and high-current systems.

Advanced STripFET V Technology

Building upon STMicroelectronics' legacy of innovation, the STL140N4LLF5 leverages proprietary STripFET V technology to achieve an optimal balance between conduction losses and switching performance. With an ultra-low Rds(on) of 2.75mΩ at 10V Vgs, this device minimizes power dissipation even under heavy load conditions. The advanced trench-gate structure ensures stable operation across a wide temperature range (-55°C to 150°C), making it ideal for harsh environments.

The device's 40V drain-source voltage rating and 140A continuous drain current capability enable it to handle high-power demands in DC-DC converters, motor control systems, and battery management applications. Its optimized gate charge (45nC @ 4.5V) contributes to faster switching transitions, reducing overall system losses while maintaining thermal stability.

ParameterSpecification
Max Vdss40V
Max Id @25°C140A
Rds(on) Max2.75mΩ @10V
PackagePowerFlat™ 5x6
PowerFlat™ Packaging Innovation

Housed in a space-saving PowerFlat™ 5x6 surface-mount package, this MOSFET offers dual benefits of compact design and superior thermal management. The package's low-profile construction (8-PowerVDFN) facilitates automated assembly while maintaining excellent heat dissipation through its exposed pad. This thermal efficiency reduces the need for additional cooling components, enabling designers to create more compact and cost-effective solutions.

The device's ±22V gate voltage tolerance provides enhanced reliability in voltage transient scenarios, while its 1V gate threshold voltage ensures compatibility with standard logic-level drivers. The integrated protection features, combined with 80W power dissipation capability, make it a reliable choice for high-reliability applications.

Comprehensive Performance Metrics

Beyond its headline specifications, the STL140N4LLF5 demonstrates exceptional dynamic performance characteristics. The device's 5900pF input capacitance at 25V Vds contributes to stable operation in high-frequency switching applications. Its 4.5V/10V dual drive voltage capability offers design flexibility, allowing engineers to optimize between gate drive losses and conduction efficiency.

For industrial automation systems, electric vehicles, and energy-efficient computing platforms, this MOSFET provides a critical advantage in power density and system efficiency. The RoHS-compliant PowerFlat package meets modern environmental standards while maintaining mechanical robustness for automated manufacturing processes.

Tags: Power Electronics, N-Channel Transistor, High-Current MOSFET, Surface Mount Device, Power Management

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