STL13N65M2 N-Channel MOSFET 650V 6.5A PowerFlat™ (5x6) HV
- Brand: STMicroelectronics
- Product Code: STL13N65M2
- Availability: In Stock
$0.46
- Ex Tax: $0.46
High-Performance Power Management with STM STL13N65M2 N-Channel MOSFET
In the ever-evolving landscape of power electronics, the STM STL13N65M2 N-Channel MOSFET emerges as a cutting-edge solution designed to meet the rigorous demands of modern power systems. This advanced component combines robust technical specifications with innovative design, making it an ideal choice for engineers and designers seeking reliability and efficiency in high-voltage applications.
Key Technical Specifications
Engineered for superior performance, the STL13N65M2 operates at a nominal drain-to-source voltage (Vdss) of 650V, supporting continuous drain currents up to 6.5A under standard thermal conditions. Its Rds(on) resistance of 475mΩ at 10V gate-source voltage ensures minimal conduction losses, while the gate charge (Qg) of 17nC optimizes switching efficiency. The device's thermal stability is further enhanced by its ±25V gate-source voltage tolerance and a maximum operating temperature of 150°C, enabling deployment in extreme environments.
Encased in STMicroelectronics' proprietary PowerFlat™ (5x6) HV package, this MOSFET offers exceptional thermal dissipation capabilities through its surface-mount design. The 8-PowerVDFN package configuration not only reduces PCB footprint but also improves mechanical durability, making it suitable for automotive, industrial, and renewable energy systems where space constraints and reliability are critical.
| Parameter | Specification |
|---|---|
| Max Vdss | 650V |
| Continuous Drain Current | 6.5A |
| Rds(on) @ 10V | 475mΩ |
| Gate Charge (Qg) | 17nC |
| Operating Temperature | -55°C to 150°C |
Design Advantages and Applications
The STL13N65M2's MDmesh™ M2 technology represents a significant advancement in power MOSFET design. By optimizing the trade-off between conduction and switching losses, this device enables higher system efficiency in applications such as DC-DC converters, motor drives, and power supplies. Its 590pF input capacitance at 100V Vds ensures stable operation in high-frequency circuits, while the 4V gate threshold voltage (at 250µA) facilitates compatibility with standard logic-level controllers.
For design engineers, the component's tape-and-reel packaging format simplifies automated assembly processes, and its active product status guarantees long-term supply stability. The absence of FET-specific features (as indicated in device characterization) allows for straightforward integration into existing architectures without requiring specialized peripheral components.
Technical Documentation and Support
STMicroelectronics provides comprehensive technical documentation for the STL13N65M2, including detailed datasheets, application notes, and SPICE models. Designers can leverage STM's PowerStudio software suite to simulate device performance in virtual environments before prototyping. The manufacturer's global distribution network ensures rapid access to samples and production quantities, with technical support teams available to assist with design-in challenges.
When selecting power MOSFETs for critical systems, engineers must consider both electrical specifications and supply chain reliability. The STL13N65M2's combination of advanced silicon technology, robust packaging, and manufacturer support infrastructure positions it as a preferred choice for next-generation power electronics. With its balance of performance parameters and design flexibility, this component offers a compelling solution for applications demanding high-voltage operation combined with compact form factors.
Tags: Power MOSFET, High Voltage, Surface Mount, Energy Efficiency, Power Management