STH3N150-2 N-Channel MOSFET 1500V 2.5A H²PAK Power Transistor
- Brand: STMicroelectronics
- Product Code: STH3N150-2
- Availability: In Stock
$1.00
- Ex Tax: $1.00
STH3N150-2: High-Voltage N-Channel MOSFET for Demanding Power Applications
STMicroelectronics' STH3N150-2 N-Channel MOSFET represents a breakthrough in power transistor technology, combining extreme durability with exceptional efficiency. Engineered for high-voltage applications, this PowerMESH™ series component delivers 1500V breakdown voltage and 2.5A continuous drain current in a compact H²PAK package. Whether you're designing industrial power systems, renewable energy inverters, or specialized motor controls, the STH3N150-2 offers the performance headroom and reliability required for mission-critical operations.
Technical Excellence in Power Transistor Design
At the heart of the STH3N150-2 lies STMicroelectronics' advanced MOSFET technology, optimized for high-speed switching and minimal conduction losses. The device maintains a maximum RDS(on) of 9Ω at 1.3A and 10V gate-source voltage, ensuring efficient power delivery even under demanding conditions. Its robust ±30V gate voltage tolerance and 5V threshold voltage specification provide designers with enhanced control flexibility while maintaining exceptional thermal stability.
Key electrical characteristics include:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 1500V |
| Continuous Drain Current (ID) | 2.5A (Tc) |
| Gate Charge (Qg) | 29.3nC @ 10V |
| Input Capacitance (Ciss) | 939pF @ 25V |
Industrial-Grade Performance and Reliability
Built for harsh environments, the STH3N150-2 operates reliably up to 150°C junction temperature while maintaining 140W power dissipation capability. The surface-mount H²PAK package (TO-263-3 variant) combines mechanical durability with efficient thermal management, making it ideal for space-constrained designs requiring industrial-grade robustness. The device's active status in ST's product line ensures long-term supply stability for production environments.
This N-Channel MOSFET excels in applications requiring:
- High-voltage switching in power supplies and converters
- Industrial motor control systems
- Renewable energy inverters
- High-frequency power circuits
Design Advantages and System Benefits
Engineers choosing the STH3N150-2 benefit from its optimized switching characteristics and rugged design. The 10V drive voltage compatibility simplifies gate drive circuit design while maintaining minimal on-resistance. With 25A short-circuit withstand capability and advanced avalanche energy ratings, this transistor provides inherent protection against transient conditions common in industrial environments.
Key design advantages include:
- Reduced conduction losses through low RDS(on)
- Enhanced thermal management via H²PAK package
- Improved system reliability through high-voltage robustness
- Space-saving surface-mount integration
Tags: Power Transistor, N-Channel MOSFET, STMicroelectronics Components, Industrial Power Electronics, Surface Mount Transistor