STMicroelectronics STH310N10F7-2 N-Channel MOSFET 100V 180A H2PAK-2
- Brand: STMicroelectronics
- Product Code: STH310N10F7-2
- Availability: In Stock
$2.30
- Ex Tax: $2.30
The STMicroelectronics STH310N10F7-2 represents a breakthrough in power semiconductor technology, combining cutting-edge STripFET™ VII trench structure with advanced thermal management capabilities. This N-Channel MOSFET delivers exceptional performance for high-current applications, offering engineers a reliable solution for demanding power electronics systems.
Innovative Power Handling Capabilities
With a 100V drain-source voltage rating and 180A continuous drain current capacity at 25°C, this device pushes the boundaries of conventional MOSFET technology. Its 2.5mΩ maximum RDS(on) at 60A/10V operating conditions ensures minimal conduction losses, making it ideal for high-efficiency power conversion systems. The device's 10V drive voltage optimization maintains perfect balance between switching performance and gate drive simplicity.
The advanced trench gate design reduces parasitic inductance while maintaining exceptional avalanche energy specifications. This makes the STH310N10F7-2 particularly suitable for applications requiring robustness against voltage spikes and transient conditions. The ±20V gate voltage tolerance provides additional design flexibility while maintaining device reliability.
Key Technical Specifications
| Parameter | Value |
|---|---|
| Maximum Power Dissipation | 315W (Tc) |
| Operating Temperature Range | -55°C to 175°C (TJ) |
| Gate Charge (Qg) | 180 nC @ 10V |
Optimized for Modern Power Systems
Designed with the latest DeepGATE™ technology, this MOSFET achieves superior performance in high-frequency switching applications. The 12,800 pF input capacitance (Ciss) at 25V enables fast switching transitions while maintaining control over dv/dt effects. The device's H2PAK-2 surface mount package combines high thermal conductivity with industry-standard footprint compatibility.
Engineers working on motor control systems, DC-DC converters, and industrial power supplies will appreciate the device's ruggedized design. The TO-263AB package format ensures reliable PCB mounting while facilitating efficient heat dissipation through standard thermal management techniques. The device maintains stable performance across extreme temperature ranges, making it suitable for automotive and industrial environments.
This power MOSFET's 3.8V gate threshold voltage (VGS(th)) at 250µA enables precise control over turn-on characteristics. The device's inherent stability under pulsed current conditions makes it particularly suitable for high-current switching applications where thermal cycling reliability is critical.
Applications and System Integration
The STH310N10F7-2 excels in a wide range of power electronics applications including:
- High-current motor drives
- Industrial power supplies
- Renewable energy systems
- Automotive powertrain electronics
- High-efficiency battery management systems
When designing with this component, engineers should consider the benefits of parallel device configurations to achieve even higher current capabilities. The device's low on-resistance and excellent thermal characteristics enable simplified heatsinking solutions in most applications. The standard footprint allows for easy migration from existing power MOSFET designs.
Tags: Power Electronics, MOSFET Technology, STMicroelectronics Components, Industrial Power Supplies, High-Efficiency Converters