STFW4N150 MOSFET N-Channel 1500V 4A Isowatt - STMicroelectronics

Revolutionizing Power Management with STFW4N150 MOSFET

In the rapidly evolving landscape of power electronics, STMicroelectronics continues to lead innovation with its STFW4N150 MOSFET, a high-voltage N-channel power transistor engineered for industrial and automotive applications requiring exceptional reliability and efficiency. This 1500V, 4A Isowatt device combines advanced silicon technology with robust packaging to deliver superior performance in demanding environments.

Key Features of STFW4N150

The STFW4N150 stands out in STMicroelectronics' PowerMESH™ portfolio through its unique blend of electrical characteristics and thermal management capabilities. Designed for switch-mode power supplies (SMPS), motor controls, and high-voltage industrial systems, this MOSFET offers:

Technical Excellence in Power Electronics

At the heart of the STFW4N150's performance lies its optimized trench gate structure, which minimizes conduction losses while maintaining fast switching characteristics. The ±30V gate voltage tolerance ensures robust operation in high-noise environments, while the 1300 pF input capacitance enables efficient gate drive control. With a maximum power dissipation of 63W (Tc) and operating temperature rating of 150°C, this device excels in thermally challenging applications.

Industrial Applications and Design Advantages

The TO-3PF through-hole package with Isowatt isolation makes this MOSFET ideal for industrial power conversion systems requiring enhanced creepage distances. Key applications include:

• High-voltage DC-DC converters
• Industrial motor drives
• Renewable energy inverters
• Automotive charging systems

Designers benefit from simplified PCB layouts thanks to the device's inherent avalanche ruggedness and the TO-3P-3 Full Pack case's mechanical stability. The 10V drive voltage compatibility aligns perfectly with standard gate driver ICs, reducing system complexity.Performance Optimization Strategies

For optimal performance, engineers should consider:

• Implementing proper heatsinking due to 63W power dissipation
• Utilizing the 50 nC gate charge for calculating switching losses
• Designing gate drive circuits within 10V Vgs limits
• Monitoring junction temperature in high ambient environments

The device's 250µA Vgs(th) threshold ensures reliable turn-on while maintaining compatibility with standard CMOS drivers. When paired with STMicroelectronics' complementary driver ICs, the STFW4N150 delivers exceptional system efficiency in hard-switching and resonant converter topologies.

Quality and Reliability

As part of STMicroelectronics' automotive-qualified product line, the STFW4N150 undergoes rigorous testing across its operating temperature range. The device's 1500V Vdss rating provides significant design margin for 1000V bus systems, ensuring long-term reliability in harsh industrial environments. With active product status and tube packaging for ESD protection during handling, this MOSFET combines manufacturing excellence with field-proven performance.

Tags: N-Channel MOSFET, High Voltage MOSFET, PowerMESH, Industrial Power, Automotive Electronics