STMicroelectronics STFW3N150 N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STFW3N150
- Availability: In Stock
$0.62
- Ex Tax: $0.62
Revolutionizing Power Management with STFW3N150 N-Channel MOSFET
The STFW3N150 from STMicroelectronics represents a breakthrough in power semiconductor technology, combining exceptional electrical performance with robust thermal management capabilities. As part of the renowned PowerMESH™ family, this N-channel MOSFET delivers industry-leading efficiency for demanding applications requiring high voltage tolerance and reliable power handling.
Advanced MOSFET Architecture
Engineered with cutting-edge metal oxide semiconductor technology, the STFW3N150 operates at an impressive 1500V drain-to-source voltage rating while maintaining exceptional conductivity. Its optimized design achieves a maximum RDS(on) of 9Ω at 1.3A and 10V gate-source voltage, ensuring minimal power losses even under heavy load conditions. The device's ±30V gate voltage tolerance provides enhanced protection against voltage spikes and transient events.
With its ISOWATT packaging and TO-3PF device enclosure, this transistor offers superior thermal dissipation characteristics. The through-hole mounting configuration ensures secure installation in high-vibration environments, making it particularly suitable for industrial and automotive applications where reliability is paramount.
Technical Excellence in Power Handling
Parameter | Specification |
---|---|
Max Voltage | 1500 V |
Continuous Drain Current | 2.5A (Tc) |
Gate Charge | 29.3 nC @ 10V |
Input Capacitance | 939 pF @ 25V |
Power Dissipation | 63W (Tc) |
This high-voltage transistor maintains stable performance across extreme operating conditions, with a maximum operating temperature rating of 150°C. The 5V gate threshold voltage at 250µA ensures compatibility with standard logic-level control circuits while maintaining precise switching characteristics.
Real-World Performance Benefits
In practical applications, the STFW3N150's exceptional electrical characteristics translate to tangible performance advantages. Its optimized gate charge and capacitance parameters enable fast switching operations, reducing switching losses by up to 30% compared to conventional high-voltage MOSFETs. The device's thermal design allows for efficient heat dissipation even in compact circuit board layouts, minimizing the need for additional cooling solutions.
The transistor's rugged construction and advanced packaging technology make it ideal for challenging environments. From industrial motor drives to renewable energy systems, this component delivers consistent performance in applications where reliability directly impacts system uptime and operating costs.
Design Flexibility and Application Range
The STFW3N150's versatile design makes it suitable for a wide array of power electronics applications. Key use cases include:
- High-voltage DC-DC converters
- Industrial motor control systems
- Renewable energy inverters
- Electric vehicle powertrains
- Telecom power supplies
Its compatibility with standard 10V gate drive circuits simplifies integration with common PWM controllers and microprocessor-based systems. The device's inherent avalanche ruggedness provides additional protection against voltage transients commonly encountered in inductive load switching applications.
Quality and Reliability Assurance
As part of STMicroelectronics' PowerMESH™ product line, the STFW3N150 undergoes rigorous quality testing to ensure compliance with the most demanding industry standards. The device's active status in the manufacturer's product portfolio guarantees continued availability and technical support for long-term design projects.
Manufacturers and design engineers benefit from the component's tube packaging format, which maintains device integrity during storage and handling. With a minimum order quantity of just one unit, this transistor offers exceptional accessibility for both prototyping and volume production requirements.
Tags: Power Electronics, High Voltage Transistor, Industrial Semiconductors, Power Management, MOSFET Technology