STFU28N65M2 N-Channel MOSFET 650V 20A TO220FP

Introducing the STFU28N65M2 N-Channel MOSFET: Power Efficiency Redefined

STMicroelectronics continues to push the boundaries of semiconductor innovation with its

STFU28N65M2 N-Channel MOSFET

, a high-performance power transistor engineered for demanding industrial and automotive applications. This 650V, 20A device combines advanced MDmesh™ M2 technology with robust thermal management capabilities, offering engineers a versatile solution for power conversion systems requiring exceptional reliability and efficiency.

At the heart of the STFU28N65M2 lies STMicroelectronics' proprietary MDmesh™ M2 technology, which dramatically reduces on-resistance (Rds(on)) while maintaining excellent switching performance. With a maximum Rds(on) of just 180mΩ at 10A and 10V gate-source voltage, this MOSFET minimizes conduction losses and improves overall system efficiency. Its optimized trench structure enables fast switching speeds without compromising on ruggedness, making it ideal for applications such as switch-mode power supplies (SMPS), motor drives, and industrial automation systems.

Key Electrical Specifications	Value
Drain-Source Voltage (Vdss)	650V
Continuous Drain Current (Id)	20A @ 25°C
Gate Charge (Qg)	35nC @ 10V
Operating Temperature	-55°C to 150°C

The device's TO-220FP package provides excellent thermal dissipation characteristics through its full-pack configuration. This through-hole mounting solution ensures mechanical stability while maintaining optimal heat transfer to the PCB. The STFU28N65M2's ±25V gate-source voltage rating offers enhanced protection against voltage spikes, while its 1440pF input capacitance (at 100V Vds) enables efficient high-frequency operation.

In modern power electronics design, thermal management remains critical for long-term reliability. The STFU28N65M2 addresses this through its 30W maximum power dissipation rating (at case temperature) and advanced junction temperature control. These features make it particularly suitable for high-ambient-temperature environments, such as industrial motor drives and renewable energy inverters. When compared to conventional 650V MOSFETs, the STFU28N65M2 demonstrates superior performance in both static and dynamic parameters:

Parameter	STFU28N65M2	Conventional MOSFET
Rds(on) (Max)	180mΩ	250mΩ
Gate Charge	35nC	45nC
Input Capacitance	1440pF	1800pF

For automotive applications, the device's 4V maximum gate threshold voltage (at 250µA) ensures stable operation across varying temperatures, while its 250µA leakage current specification guarantees minimal standby power consumption. Designers working on electric vehicle charging systems or automotive powertrains will appreciate its AEC-Q101 qualification and inherent robustness against voltage transients.

When implementing the STFU28N65M2 in power circuits, engineers should consider gate driver selection to fully exploit its fast switching capabilities. The device's 10V drive voltage requirement aligns well with standard gate driver ICs, while its 35nC gate charge minimizes driver power requirements. For parallel operation scenarios, careful attention to PCB layout symmetry and thermal management will help maintain balanced current distribution across multiple devices.

In conclusion, the STFU28N65M2 N-Channel MOSFET represents a significant advancement in power semiconductor technology. Its combination of low on-resistance, fast switching characteristics, and robust packaging makes it an ideal choice for next-generation power conversion systems. Whether designing industrial motor drives, renewable energy inverters, or automotive power systems, engineers can rely on STMicroelectronics' proven MDmesh™ M2 technology to deliver superior performance and reliability.

Tags: Power Electronics, Industrial Transistors, Automotive Components, Semiconductor Devices, High Voltage MOSFET