STF9N60M2 N-Channel MOSFET 600V 5.5A TO-220FP Power Transistor
- Brand: STMicroelectronics
- Product Code: STF9N60M2
- Availability: In Stock
$0.50
- Ex Tax: $0.50
STF9N60M2: High-Performance N-Channel MOSFET for Demanding Power Applications
Engineered for efficiency and reliability, the STF9N60M2 from STMicroelectronics represents the next evolution in power transistor technology. This advanced N-channel MOSFET combines cutting-edge design with robust specifications, making it an ideal choice for modern power electronics systems requiring high voltage tolerance, thermal stability, and minimal energy loss. Part of ST's acclaimed MDmesh™ II Plus series, this device exemplifies semiconductor innovation through its optimized electrical characteristics and industrial-grade construction.
Technical Excellence in Power Management
Operating at an impressive 600V rating with a continuous drain current of 5.5A, the STF9N60M2 delivers exceptional performance in high-voltage environments. Its advanced silicon technology achieves an ultra-low RDS(on) of 780mΩ at 3A and 10V gate-source voltage, significantly reducing conduction losses. The device's ±25V gate voltage tolerance ensures enhanced protection against voltage spikes, while its 150°C maximum operating temperature rating demonstrates superior thermal endurance for challenging applications.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 600V |
| Continuous Drain Current (ID) | 5.5A |
| RDS(on) Max | 780mΩ @ 3A, 10V |
| Gate Charge (Qg) | 10nC @ 10V |
| Input Capacitance (Ciss) | 320pF @ 100V |
Industrial-Grade Design and Versatile Applications
Housed in the rugged TO-220FP package, this through-hole MOSFET offers excellent mechanical stability and heat dissipation capabilities. Its 3-pin full-pack configuration simplifies PCB mounting while ensuring reliable electrical connections. The device's comprehensive feature set makes it particularly well-suited for power supply systems, motor control circuits, industrial automation equipment, and renewable energy applications like solar inverters and battery management systems.
As part of the MDmesh™ II Plus series, the STF9N60M2 incorporates STMicroelectronics' proprietary advanced planar technology. This manufacturing approach optimizes the balance between on-state resistance and switching performance, resulting in improved energy efficiency across various operating conditions. The device maintains stable performance even under transient load conditions, thanks to its 4V gate threshold voltage (at 250µA) and 20W power dissipation rating.
Reliability and Performance Validation
Engineers will appreciate the device's guaranteed specifications across its operating temperature range. The 320pF maximum input capacitance at 100V ensures predictable high-frequency performance, while the 10nC gate charge specification enables fast switching transitions. These characteristics combine to deliver exceptional system efficiency in both continuous and pulsed operation modes.
Whether designing high-voltage converters, industrial motor drives, or power factor correction circuits, the STF9N60M2 offers a compelling combination of electrical performance and thermal robustness. Its comprehensive protection features and proven reliability make it a valuable component for mission-critical applications where system longevity and consistent performance are paramount.
Tags: Power Electronics, Semiconductor, Voltage Regulator, Industrial Automation, Energy Efficiency