STMicroelectronics STF36N60M6 MDmesh™ M6 Series N-Channel MOSFET 600V 30A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF36N60M6
- Availability: In Stock
$2.00
- Ex Tax: $2.00
High-Performance Power Management with STF36N60M6 MOSFET
STMicroelectronics continues to set benchmarks in semiconductor innovation with its STF36N60M6 N-Channel MOSFET, a cutting-edge solution designed for high-voltage applications requiring exceptional efficiency and reliability. This advanced power transistor belongs to the MDmesh™ M6 family, which combines state-of-the-art silicon technology with robust packaging to deliver superior performance in demanding environments. With a voltage rating of 600V and a continuous drain current capacity of 30A, this device is engineered to meet the challenges of modern power conversion systems while maintaining optimal thermal management.
Technical Excellence in Power Discrete Design
The STF36N60M6 showcases remarkable electrical characteristics that make it ideal for a wide range of industrial applications. Its ultra-low on-resistance of just 99mΩ at 15A and 10V gate-source voltage ensures minimal conduction losses, translating to improved system efficiency. The device's optimized gate charge of 44.3nC at 10V enables faster switching transitions, making it particularly suitable for high-frequency operations in power supplies, motor drives, and renewable energy systems.
One of the standout features of this MOSFET is its comprehensive protection capabilities. With a maximum gate-source voltage rating of ±25V and thermal shutdown characteristics that activate at 150°C, the device offers robust defense against common operating stresses. The 4.75V gate threshold voltage at 250µA ensures reliable turn-on characteristics while maintaining compatibility with standard driver circuits.
| Parameter | Specification |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 30A |
| On-Resistance | 99mΩ |
| Gate Charge | 44.3nC |
Engineered for Reliability and Versatility
Housed in a TO-220FP package, this through-hole device offers excellent mechanical stability and thermal dissipation characteristics. The package design facilitates easy integration into conventional PCB layouts while providing 40W of power dissipation capability at the case temperature. Operating across an impressive temperature range of -55°C to 150°C, the STF36N60M6 maintains consistent performance in both extreme industrial environments and consumer applications.
The MOSFET's design advantages extend beyond its electrical specifications. Its input capacitance of 1960pF at 100V drain-source voltage ensures stable operation in high-speed switching applications. The device's inherent robustness is further enhanced by STMicroelectronics' proprietary manufacturing processes, which guarantee consistent quality and long-term reliability across 18,000+ units in stock availability.
Applications and System Integration
This versatile power transistor finds application in numerous domains including:
- Switch-mode power supplies (SMPS)
- Motor control and drive systems
- Solar inverters and energy conversion
- Industrial automation equipment
- Uninterruptible power supplies (UPS)
Its combination of high voltage capability, low conduction losses, and robust packaging makes it particularly well-suited for designs requiring both performance and reliability. The MDmesh™ M6 technology platform behind this device represents STMicroelectronics' commitment to advancing power management solutions that meet evolving industry standards.
Tags: Power Electronics, N-Channel MOSFET, Industrial Semiconductors, High Voltage Transistors, STMicroelectronics Components