STM STF2N80K5 SuperMESH5 N-Channel MOSFET 800V 2A TO-220FP

STM STF2N80K5 SuperMESH5 N-Channel MOSFET 800V 2A TO-220FP

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Revolutionizing Power Management with STM STF2N80K5 SuperMESH5 MOSFET

In the rapidly evolving world of semiconductor technology, the STF2N80K5 from STMicroelectronics emerges as a game-changer for power electronics applications. Part of the advanced SuperMESH5™ series, this N-channel MOSFET combines cutting-edge silicon technology with optimized packaging to deliver exceptional performance in switching applications requiring high voltage tolerance and efficient power handling.

Technical Excellence in Power Discrete Design

Engineered for superior efficiency, the STF2N80K5 showcases STMicroelectronics' commitment to innovation through its 800V drain-source voltage rating that empowers designers to create robust power systems. With a maximum on-resistance of just 4.5Ω at 1A/10V, this device minimizes conduction losses while maintaining exceptional thermal stability. The 3nC gate charge at 10V drive voltage ensures fast switching transitions, making it ideal for high-frequency operations in modern power supplies.

ParameterValue
Max Voltage800V
Continuous Drain Current2A
Rds(on) Max4.5Ω @ 1A,10V
Gate Charge3nC @ 10V
Operating Temp-55°C to 150°C
Optimized for Demanding Applications

The TO-220FP package combines through-hole mounting reliability with enhanced thermal dissipation capabilities, making the STF2N80K5 particularly well-suited for industrial motor controls, power factor correction circuits, and high-voltage DC-DC converters. Its 20W power dissipation rating at case temperature ensures stable operation even under continuous load conditions, while the -55°C to 150°C operating temperature range provides exceptional environmental tolerance.

SuperMESH5™ Technology Advantages

At the heart of this device lies ST's fifth-generation SuperMESH technology, which dramatically improves switching performance through optimized cell structure design. This innovation reduces both conduction and switching losses while maintaining excellent avalanche energy ratings. The result is a device that enables higher efficiency power supplies with reduced component count and simpler thermal management requirements.

Designers will appreciate the device's 5V gate threshold voltage (with 100µA reference current) that ensures compatibility with standard logic level drivers, while the 30V maximum gate-source voltage provides additional safety margin against voltage transients. The 95pF input capacitance at 100V VDS further contributes to fast switching performance without compromising stability.

Reliability and Compliance

As part of STMicroelectronics' active product portfolio, the STF2N80K5 undergoes rigorous quality screening to meet industrial-grade reliability standards. The device complies with RoHS environmental regulations and features a moisture sensitivity level appropriate for industrial applications. Its tube packaging ensures safe handling and automated assembly compatibility.

Design Flexibility and System Optimization

When integrating this MOSFET into new designs, engineers can leverage its comprehensive parameter set to optimize various power system configurations. The combination of high voltage capability with moderate current rating makes it particularly suitable for applications where space constraints and cost-effectiveness are critical considerations. Whether used in flyback converters, LED drivers, or motor control circuits, the STF2N80K5 offers a compelling balance of performance and value.

Tags: Power Electronics, Semiconductor Components, Industrial Automation, Voltage Regulation, Electronic Design

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