STF24NM60N MOSFET N-Channel 600V 17A TO-220FP | STMicroelectronics

Revolutionizing Power Management with STF24NM60N MOSFET

STMicroelectronics' STF24NM60N MOSFET represents the cutting-edge of power transistor technology, combining advanced MDmesh™ II technology with exceptional performance metrics. This N-channel power MOSFET delivers unparalleled efficiency in high-voltage applications while maintaining exceptional thermal stability and switching performance. Designed for demanding environments, this device sets new standards in power electronics design.

Key Technical Specifications

Engineered with STMicroelectronics' proven expertise, the STF24NM60N features a 600V rating with 17A continuous drain current capacity. Its optimized Rds(on) of 190mΩ at 8A/10V enables minimal conduction losses, while the 46nC gate charge ensures fast switching transitions. The device's ±30V gate voltage tolerance provides enhanced design flexibility and robustness.

Advanced Packaging & Performance

Housed in a TO-220FP package with through-hole mounting, this MOSFET combines mechanical durability with superior thermal dissipation. The device's 30W power dissipation rating and 1400pF input capacitance enable efficient operation in high-frequency switching applications. Its 4V gate threshold voltage ensures compatibility with standard driver circuits while maintaining excellent switching characteristics.

As part of STMicroelectronics' MDmesh™ II series, the STF24NM60N leverages innovative silicon technology to minimize on-resistance while maintaining exceptional avalanche energy ratings. This makes it ideal for applications requiring high reliability and efficiency in compact designs.

Applications & Design Considerations

The STF24NM60N excels in a wide range of power conversion applications including:

• Switching power supplies and adapters
• Motor control systems
• Industrial automation equipment
• Renewable energy inverters
• High-voltage DC-DC converters

Its robust construction and thermal stability make it particularly suitable for harsh environments where reliability is critical. The device's ±30V gate voltage rating provides designers with additional margin for voltage spikes and transient conditions.

Technical Advantages

Several key features distinguish this MOSFET in competitive power electronics markets:

The optimized Rds(on) vs. Qg trade-off enables both low conduction losses and minimal switching losses. The device's 250µA gate threshold current ensures stable operation across varying temperature ranges. With its 17A rating at 25°C, designers can achieve higher current densities without compromising reliability.

The STF24NM60N's packaging technology combines mechanical robustness with excellent thermal conductivity, ensuring long-term reliability in high-stress applications. The TO-220FP package's footprint compatibility facilitates easy integration with existing PCB layouts while maintaining superior thermal management.

Design Optimization Strategies

When implementing this MOSFET in power circuits, consider the following design practices:

• Optimize gate drive circuitry for 10V operation
• Implement proper thermal management for high-current applications
• Use snubber circuits for voltage spike suppression
• Ensure adequate spacing for high-voltage isolation
• Implement current limiting protection mechanisms

These practices will maximize the device's performance potential while maintaining long-term reliability. The device's active status in STMicroelectronics' product portfolio ensures continued availability and technical support.

Tags: Power Transistors, High Voltage MOSFET, Industrial Electronics, Power Management, Electronic Components