STF21N90K5 SuperMESH5 MOSFET from STMicroelectronics | 900V N-Channel Power Transistor

STF21N90K5 SuperMESH5 MOSFET from STMicroelectronics | 900V N-Channel Power Transistor

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High-Performance STF21N90K5 SuperMESH5 MOSFET for Demanding Power Applications

STMicroelectronics' STF21N90K5 SuperMESH5 MOSFET represents the pinnacle of high-voltage semiconductor technology, delivering exceptional performance for power conversion systems requiring robust 900V capabilities. This N-channel MOSFET combines advanced SuperMESH5 technology with optimized thermal management to enable efficient power delivery in industrial, automotive, and renewable energy applications.

Technical Excellence in Power Semiconductor Design

Engineered for superior switching performance, the STF21N90K5 features a groundbreaking 900V drain-source voltage rating alongside a continuous drain current of 18.5A at 25°C. Its industry-leading 299mΩ maximum on-resistance at 10V gate-source voltage ensures minimal conduction losses, while the 43nC gate charge specification enables fast switching transitions. The device's ±30V gate voltage rating provides exceptional operating margin, complemented by a 5V threshold voltage at 100µA that maintains compatibility with standard logic drivers.

ParameterValue
Max Voltage900V
Continuous Current18.5A
On-Resistance299mΩ
Gate Charge43nC
Operating Temp-55°C to 150°C
Optimized for Real-World Applications

Designed for through-hole mounting in the rugged TO-220FP package, this power transistor excels in high-stress environments. Its 40W maximum power dissipation rating at case temperature ensures reliable operation in compact designs, while the 1645pF input capacitance at 100V enables efficient high-frequency switching. The device's thermal resistance characteristics make it ideal for power factor correction circuits, industrial motor drives, and solar inverters where thermal management is critical.

Reliability and Longevity

As part of STMicroelectronics' SuperMESH5 family, the STF21N90K5 benefits from advanced process technology that combines avalanche energy ratings with dynamic dV/dt stability. The TO-220-3 Full Pack package provides excellent mechanical durability while maintaining electrical isolation. With its active product status and industrial temperature range (-55°C to 150°C), this MOSFET guarantees long-term reliability in harsh operating conditions across automotive, industrial automation, and energy infrastructure applications.

Tags: Power MOSFET, High Voltage Transistor, STMicroelectronics Components, N-Channel Semiconductor, Industrial Electronics

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