STF21N65M5 MDmesh™ V Series N-Channel MOSFET

STF21N65M5: High-Performance Power MOSFET for Demanding Applications

STMicroelectronics' STF21N65M5 is a cutting-edge N-channel power MOSFET engineered to deliver exceptional performance in high-voltage and high-current applications. Part of the MDmesh™ V series, this device combines advanced silicon technology with robust packaging to meet the demands of modern power electronics systems. With a rated drain-source voltage (V_DSS) of 650V and a continuous drain current (I_D) of 17A at 25°C, the STF21N65M5 excels in power conversion, motor control, and industrial equipment where reliability and efficiency are critical.

Technical Excellence in Power Management

At the heart of the STF21N65M5's performance is its optimized R_DS(on) of just 190mΩ at V_GS = 10V, ensuring minimal conduction losses even under heavy load conditions. This low on-resistance, combined with a high gate charge (Q_g) of 50nC at 10V, enables rapid switching while maintaining thermal stability. The device's ±25V gate voltage rating provides enhanced protection against voltage spikes, extending operational lifespan in harsh environments.

The STF21N65M5's design prioritizes thermal efficiency through its TO-220FP package, which offers excellent heat dissipation capabilities. This through-hole package combines mechanical durability with electrical performance, making it ideal for applications requiring long-term reliability. Key specifications include:

Parameter	Value
VDSS	650V
ID	17A (Tc)
RDS(on)	190mΩ @ 8.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole

Advanced Features for Industrial Applications

Engineered for modern power electronics, the STF21N65M5 incorporates multiple design innovations. Its MDmesh™ V technology minimizes switching losses while maintaining high ruggedness, making it suitable for:

• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Industrial motor drives
• Welding equipment
• Heating systems

With a maximum power dissipation of 30W (T_c) and a high input capacitance of 1950pF at 100V, this MOSFET delivers consistent performance in high-frequency switching applications. The device's 5V gate threshold voltage (V_GS(th)) ensures compatibility with standard logic-level drivers while maintaining noise immunity.

Reliability and Longevity

STMicroelectronics' commitment to quality is evident in the STF21N65M5's construction. The device maintains stable operation at junction temperatures up to 150°C, with thermal resistance optimized for efficient heat transfer. Its TO-220-3 full-pack package provides mechanical robustness while ensuring electrical isolation. The MOSFET's active status and availability in tube packaging make it suitable for both prototyping and volume production.

Whether you're designing high-efficiency power systems or upgrading existing equipment, the STF21N65M5 offers the perfect balance of performance, reliability, and ease of integration. Its combination of high voltage capability, low on-resistance, and rugged packaging makes it a preferred choice for engineers working on next-generation power electronics solutions.

Tags: N-Channel Transistor, High Voltage MOSFET, Power Management, Electronic Components, Semiconductor Devices