STF18NM60N N-Channel MOSFET 600V 13A TO-220FP Power Transistor
- Brand: STMicroelectronics
- Product Code: STF18NM60N
- Availability: In Stock
$0.80
- Ex Tax: $0.80
STF18NM60N: High-Performance N-Channel MOSFET for Demanding Power Applications
STMicroelectronics' STF18NM60N is a cutting-edge N-channel MOSFET engineered for high-voltage and high-current applications requiring exceptional reliability and efficiency. As part of the MDmesh™ II series, this transistor combines advanced silicon technology with robust packaging to deliver superior performance in industrial power systems, motor drives, and switching applications.
Advanced Specifications for Demanding Environments
Built with a 600 V drain-source voltage rating and 13 A continuous drain current capacity (at 25°C), the STF18NM60N excels in high-power environments. Its optimized RDS(on) of 285 mΩ at 6.5 A and 10 V gate-source voltage ensures minimal conduction losses, while the ±25 V gate-source voltage tolerance provides enhanced operational flexibility. The device's 35 nC gate charge (at 10 V) enables fast switching performance, making it ideal for high-frequency applications.
This TO-220FP packaged transistor features a maximum power dissipation of 30 W (at TC) and operates across extreme temperatures (-55°C to 150°C), maintaining stability in harsh industrial conditions. Its 1000 pF input capacitance (at 50 V) and 4 V gate threshold voltage ensure compatibility with standard gate drivers while maintaining efficient performance.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID) | 13 A @ 25°C |
| RDS(on) Max | 285 mΩ @ 6.5 A, 10 V |
| Gate Charge (Qg) | 35 nC @ 10 V |
| Operating Temperature | -55°C to 150°C |
Design Advantages and Applications
The STF18NM60N's through-hole TO-220-3 full-pack configuration offers excellent thermal management and mechanical stability for industrial equipment. Its advanced MOSFET architecture minimizes switching losses while maintaining high breakdown voltage characteristics, making it perfect for:
- Industrial power supplies and converters
- Motor control and drive systems
- Renewable energy inverters
- High-voltage switching circuits
- Power factor correction (PFC) modules
As an active product series component, this transistor benefits from STMicroelectronics' ongoing quality assurance and technical support. The device's tube packaging ensures safe handling during manufacturing processes while maintaining component integrity.
Beyond the Specifications
While technical parameters highlight performance capabilities, the STF18NM60N's true value lies in its system-level benefits. The optimized switching characteristics reduce electromagnetic interference (EMI), lowering filtering requirements in high-frequency designs. Its thermal performance enables smaller heatsink solutions, contributing to compact power system designs without compromising reliability.
For designers seeking alternatives to traditional silicon carbide (SiC) devices, this MOSFET offers a cost-effective solution with comparable performance in many applications. The ±25 V gate-source voltage rating provides additional protection against voltage spikes in demanding environments, extending component lifespan.
Tags: Power Transistor, High Voltage MOSFET, TO-220FP Package, Industrial Electronics, Semiconductor Devices