STMicroelectronics STF11NM60ND FDmesh™ II N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STF11NM60ND
- Availability: In Stock
$0.90
- Ex Tax: $0.90
High-Performance Power Management with STF11NM60ND MOSFET
STMicroelectronics continues to push the boundaries of power semiconductor technology with the FDmesh™ II series, exemplified by the STF11NM60ND N-Channel MOSFET. This advanced component combines high-voltage capability with optimized thermal performance, making it ideal for demanding industrial and automotive applications where reliability and efficiency are paramount.
Key Technical Advantages
Engineered for modern power electronics systems, the STF11NM60ND delivers exceptional specifications that address critical design requirements. With a 600V drain-source voltage rating and 10A continuous drain current capacity, this device maintains stable operation even under extreme conditions. The 450mΩ maximum on-resistance at 5A and 10V gate-source voltage ensures minimal conduction losses, while the 30nC gate charge at 10V drive voltage enables fast switching transitions.
Designed for thermal efficiency, the TO-220FP package features a full-pak configuration that enhances heat dissipation. This through-hole device maintains operational integrity across extreme temperatures (-55°C to 150°C), with a maximum power dissipation rating of 25W at case temperature. The ±25V gate-source voltage tolerance provides additional design flexibility while maintaining robustness against voltage transients.
| Parameter | Specification |
|---|---|
| Max Voltage | 600 V |
| Continuous Current | 10 A |
| Rds(on) Max | 450 mΩ |
| Gate Charge | 30 nC |
| Operating Temp | -55°C to 150°C |
Industrial & Automotive Applications
The STF11NM60ND's combination of voltage capability and current handling makes it particularly well-suited for power supply systems, motor control circuits, and automotive electronics. Its FDmesh™ II technology implementation ensures minimal switching losses in high-frequency applications while maintaining excellent avalanche energy ratings. The device's threshold voltage characteristics (5V max at 250µA) enable precise control in various power conversion topologies.
As part of STMicroelectronics' FDmesh™ II series, this MOSFET benefits from advanced process technology that balances conduction and switching losses. The 850pF input capacitance at 50V drain-source voltage supports stable operation in high-speed switching environments while maintaining gate drive efficiency. These characteristics make it an excellent choice for industrial motor drives, automotive power systems, and high-efficiency power supplies.
Design Considerations & Packaging
Available in standard TO-220-3 full-pack packaging, the STF11NM60ND offers convenient through-hole mounting while maintaining excellent thermal performance. The device's parametric stability across operating conditions ensures consistent performance in both continuous and pulsed operation modes. Designers will appreciate the comprehensive documentation and application support available through STMicroelectronics' technical resources.
This active-status component represents STMicroelectronics' commitment to power semiconductor innovation. With its optimized parameter set and robust packaging, the STF11NM60ND addresses the critical needs of modern power electronics designers seeking reliable, high-performance solutions for demanding applications.
Tags: Power Electronics, Industrial Semiconductors, Automotive Components, High Voltage Transistors, Energy Efficient Devices