STMicroelectronics STF10N80K5 N-Channel MOSFET 800V 9A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF10N80K5
- Availability: In Stock
$1.50
- Ex Tax: $1.50
High-Performance STF10N80K5 N-Channel MOSFET for Advanced Power Management
STMicroelectronics, a global leader in semiconductor solutions, introduces the STF10N80K5 N-Channel MOSFET – a cutting-edge power management device engineered for demanding industrial and consumer applications. With its robust 800V rating and optimized thermal performance, this TO-220FP packaged transistor delivers exceptional reliability in high-voltage environments while maintaining minimal conduction losses.
Technical Specifications and Features
The STF10N80K5 showcases state-of-the-art MDmesh™ technology, achieving an impressive 600mΩ Rds(on) at 4.5A and 10V gate drive. Its advanced design incorporates a 5V gate threshold voltage (Vgs(th)) with ±30V gate-source voltage tolerance, ensuring compatibility with standard logic-level drivers while maintaining robustness against voltage spikes. The device's 22nC gate charge (Qg) enables fast switching performance, reducing switching losses in high-frequency applications.
| Parameter | Specification |
|---|---|
| Max Voltage (Vdss) | 800V |
| Continuous Drain Current | 9A @ 25°C |
| Conduction Loss (Rds(on)) | 600mΩ @ 10V Vgs |
| Power Dissipation | 30W (Tc) |
| Operating Temperature | -55°C to 150°C |
Design Advantages and Applications
Designed for through-hole mounting, the TO-220FP package provides excellent thermal dissipation capabilities while maintaining industry-standard footprint compatibility. This makes the STF10N80K5 ideal for power supplies, motor control systems, and industrial automation equipment requiring high-voltage switching. The device's 635pF input capacitance (Ciss) at 100V enables efficient paralleling for higher current applications without compromising stability.
Engineers will appreciate the device's inherent reliability in harsh environments, with guaranteed performance across its full operating temperature range. The MOSFET's robust construction and advanced passivation layer protect against moisture and thermal stress, making it suitable for both indoor and outdoor applications. Its compliance with RoHS standards ensures environmental sustainability while maintaining electrical performance.
Performance Optimization
The STF10N80K5's optimized gate drive characteristics enable efficient operation in both linear and switching modes. With its 10V drive voltage recommendation, the device maintains minimal on-state resistance while preventing gate oxide stress. The 100µA test current for Vgs(th) specification ensures precise threshold voltage control, facilitating accurate current regulation in power management circuits.
This versatile MOSFET excels in various power conversion topologies including flyback converters, LLC resonant converters, and PFC (Power Factor Correction) circuits. Its high avalanche energy rating and built-in body diode make it particularly suitable for inductive load switching applications in industrial motor drives and automotive systems.
Tags: STMicroelectronics, N-Channel MOSFET, TO-220FP, Industrial Electronics, Power Efficiency