STF10N60M2 N-Channel MOSFET 600V 7.5A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF10N60M2
- Availability: In Stock
$0.45
- Ex Tax: $0.45
STF10N60M2 N-Channel MOSFET: High-Performance Power Solution for Demanding Applications
The STF10N60M2 N-Channel MOSFET from STMicroelectronics represents a significant advancement in power semiconductor technology. Designed for high-voltage switching applications, this device combines robust electrical characteristics with exceptional thermal performance in a compact TO-220FP package. As part of ST's MDmesh™ II Plus series, the STF10N60M2 delivers optimized efficiency and reliability for modern power electronics systems.
Technical Excellence in Power Management
Engineered to handle demanding power requirements, the STF10N60M2 features a 600V drain-source voltage rating paired with a continuous drain current capacity of 7.5A at 25°C. This exceptional combination enables designers to create compact power solutions for applications ranging from industrial motor drives to renewable energy systems. The device's 600mΩ maximum RDS(on) at 4A/10V ensures minimal conduction losses, while its advanced gate charge characteristics (13.5nC max @ 10V) facilitate rapid switching transitions.
Operating in the demanding -55°C to 150°C temperature range, this MOSFET maintains performance stability across extreme environmental conditions. The ±25V gate-source voltage tolerance provides enhanced protection against voltage spikes, while the through-hole mounting configuration ensures reliable mechanical stability in various PCB layouts.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 7.5A (Tc) |
| RDS(on) Max | 600mΩ @ 4A, 10V |
| Gate Charge (Qg) | 13.5nC @ 10V |
| Power Dissipation | 25W (Tc) |
Advanced Packaging for Thermal Efficiency
Housed in the TO-220-3 Full Pack configuration, the STF10N60M2 optimizes thermal dissipation through its enhanced package design. The TO-220FP variant features improved thermal resistance characteristics compared to standard TO-220 packages, enabling efficient heat transfer without requiring additional heatsinking in many applications. This thermal efficiency translates to higher system reliability and potential cost savings in thermal management components.
The device's 400pF input capacitance (Ciss) at 100V ensures controlled switching behavior, minimizing electromagnetic interference (EMI) while maintaining fast transition times. This balance between switching speed and EMI control makes the STF10N60M2 particularly suitable for applications requiring compliance with electromagnetic compatibility standards.
Design Flexibility Across Industries
The STF10N60M2's versatile characteristics make it an ideal component for a wide range of power electronics applications. Its high voltage capability and thermal stability find particular value in:
• Industrial automation systems requiring precise motor control
• Renewable energy inverters for solar and wind power applications
• High-frequency power supplies and converters
• Electric vehicle charging infrastructure
• Uninterruptible power supply (UPS) systems
Engineers can leverage the device's 4V gate threshold voltage (max @ 250µA) to implement efficient gate drive circuits while maintaining robust short-circuit protection capabilities. The MOSFET's inherent avalanche ruggedness further enhances system reliability in challenging operating conditions.
Quality and Reliability Assurance
As part of STMicroelectronics' MDmesh™ II Plus family, the STF10N60M2 undergoes rigorous quality testing to ensure compliance with industry standards. The device's active status in ST's product roadmap guarantees long-term supply availability for production systems. Its compliance with RoHS and REACH regulations ensures environmental compliance while maintaining performance integrity.
The TO-220FP package's mechanical dimensions (standard TO-220 footprint with enhanced thermal pad) allow seamless integration with existing designs while providing improved thermal performance. This backward compatibility simplifies design upgrades seeking to enhance power efficiency without complete system redesigns.
Conclusion: Powering the Future of Electronics
The STF10N60M2 N-Channel MOSFET exemplifies STMicroelectronics' commitment to advancing power semiconductor technology. Its combination of high voltage capability, efficient conduction characteristics, and robust thermal management makes it a versatile solution for modern power electronics challenges. Whether in industrial automation, renewable energy systems, or power supply applications, this device offers the performance headroom needed to meet evolving efficiency standards while maintaining design simplicity.
With its comprehensive feature set and proven reliability, the STF10N60M2 represents an optimal balance between performance, efficiency, and design flexibility. Engineers seeking to implement robust power solutions will find this MOSFET an invaluable component in their design toolkit, capable of delivering consistent performance in even the most demanding applications.
Tags: Power MOSFET, TO-220FP, High Voltage, 7.5A, STM