STMicroelectronics STD4LN80K5 MOSFET N-Channel 800V 3A DPAK

STMicroelectronics STD4LN80K5 MOSFET N-Channel 800V 3A DPAK

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High-Performance MDmesh™ K5 MOSFET for Demanding Power Applications

STMicroelectronics continues to set new benchmarks in power semiconductor technology with its MDmesh™ K5 series, exemplified by the STD4LN80K5 MOSFET. This N-channel transistor combines advanced silicon design with robust packaging to deliver exceptional performance in high-voltage applications such as industrial power supplies, motor drives, and switching circuits. Engineered for efficiency and reliability, this device represents the perfect marriage of cutting-edge technology and practical engineering requirements.

Key Technical Advantages

Operating at an impressive 800V drain-source voltage rating while maintaining a continuous drain current of 3A (at 25°C), the STD4LN80K5 offers remarkable power handling capabilities in a compact DPAK surface-mount package. Its optimized RDS(on) of 2.6Ω at 10V gate drive ensures minimal conduction losses, translating to improved system efficiency and reduced thermal stress. The device's advanced gate charge management (3.7nC max @ 10V) enables fast switching performance while maintaining manageable drive requirements.

ParameterValue
Max Voltage800 V
Continuous Current3A
On-Resistance2.6Ω
Operating Temperature-55°C to 150°C
Advanced Design Features

Beyond its primary specifications, this MOSFET incorporates several design innovations that enhance its practical usability. The ±30V gate voltage rating provides exceptional robustness against voltage transients, while the 122pF input capacitance (at 100V VDS) balances switching performance with drive capability requirements. The device's thermal management capabilities, featuring 60W power dissipation at the case, enable reliable operation in demanding environments without excessive thermal derating.

The DPAK (TO-252-3) surface-mount package offers multiple advantages including improved PCB space utilization, enhanced thermal dissipation through the drain tab, and compatibility with automated assembly processes. This makes the STD4LN80K5 ideal for modern power electronics designs where size, reliability, and manufacturing efficiency are critical considerations.

Design Flexibility and Applications

With its 5V gate threshold voltage (at 100µA) and compatibility with standard 10V gate drive circuits, this MOSFET seamlessly integrates into various control architectures. Its characteristics make it particularly well-suited for applications such as:

  • Industrial motor control systems
  • High-voltage DC-DC converters
  • Uninterruptible power supplies (UPS)
  • Industrial automation equipment
  • Power factor correction circuits

The device's wide operating temperature range (-55°C to 150°C) ensures reliable performance across extreme environmental conditions, making it suitable for both harsh industrial environments and standard commercial applications.

Manufacturing and Packaging

Available in Tape & Reel packaging (TR), the STD4LN80K5 supports efficient high-volume production requirements. The surface-mount design reduces assembly costs while maintaining excellent thermal performance through the drain tab connection. STMicroelectronics' strict quality control and production standards ensure consistent device parameters across batches, simplifying design verification and production testing processes.

Tags: High-Voltage MOSFET, Surface Mount Transistor, STMicroelectronics Components, Power Electronics, Industrial Semiconductor

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