STD30PF03LT4 P-Channel MOSFET 30V 24A DPAK

High-Performance P-Channel MOSFET for Demanding Power Applications

The STD30PF03LT4 from STMicroelectronics represents a pinnacle of innovation in power semiconductor technology. As part of the STripFET™ II series, this P-Channel MOSFET combines advanced design principles with robust performance characteristics, making it ideal for applications requiring efficient power management and high reliability. With its 30V rating and 24A continuous drain current capability, this device serves as a critical component in modern electronic systems ranging from automotive electronics to industrial power supplies.

Technical Excellence in Power Electronics

Engineered for optimal performance, the STD30PF03LT4 features a remarkably low R_DS(on) of just 28mΩ at V_GS = 10V, ensuring minimal conduction losses and superior thermal efficiency. Its advanced gate charge optimization (28nC @ 5V) enables fast switching characteristics while maintaining low power dissipation. The device's ±16V gate voltage rating provides enhanced operational flexibility, making it compatible with various driver circuits and control systems.

Key technical parameters include:

Design and Packaging Advantages

Housed in a compact DPAK (TO-252-3) surface-mount package, this MOSFET offers excellent thermal management through its power tab design. The package enables efficient heat dissipation while maintaining a small footprint, making it particularly suitable for space-constrained applications. Its 175°C maximum operating temperature rating ensures reliable performance in demanding environments, while the 1670pF input capacitance value at 25V demonstrates its suitability for high-frequency switching applications.

Applications and System Integration

The versatility of the STD30PF03LT4 extends across multiple application domains. In automotive electronics, it serves as an efficient solution for body control modules, power windows, and lighting systems. Industrial applications benefit from its robust 70W power dissipation capability in motor control circuits and DC-DC converters. The device's 1V gate threshold voltage (at 250µA) enables efficient battery-powered applications where low-voltage operation is critical.

Performance Characteristics

This STMicroelectronics component demonstrates exceptional performance across various operating conditions. The device maintains stable operation across its 5-10V drive voltage range, ensuring compatibility with standard logic-level gate drivers. Its optimized capacitance characteristics (1670pF at 25V) contribute to reduced switching losses, while the surface-mount packaging facilitates automated assembly processes and enhances manufacturing efficiency.

Why Choose STripFET™ II Technology?

As a member of STMicroelectronics' STripFET™ II family, the STD30PF03LT4 benefits from the company's decades of expertise in power MOSFET development. This technology combines advanced trench gate structures with optimized die design to deliver superior performance metrics. The device's obsolete status reflects ST's continuous innovation cycle, but its proven performance characteristics continue to make it a preferred choice for systems requiring field-proven reliability and consistent electrical characteristics.

Design Considerations

Engineers should consider several factors when implementing this MOSFET in their designs. The device's 70W power dissipation rating (at case temperature) necessitates proper thermal management solutions, particularly in high-current applications. The ±16V gate voltage rating provides design flexibility, but circuit designers should ensure gate drive circuits remain within these limits. The 28mΩ R_DS(on) value enables efficient operation in high-current scenarios, though thermal calculations should account for operating conditions and ambient temperatures.

Tags: Power MOSFET, DPAK Package, STripFET Technology, Surface Mount, Automotive Electronics