STMicroelectronics STD2N62K3 N-Channel MOSFET 620V 2.2A DPAK

High-Performance Power Management with STMicroelectronics STD2N62K3

In the rapidly evolving world of power electronics, selecting the right MOSFET can make all the difference between mediocre performance and exceptional efficiency. The STMicroelectronics STD2N62K3 N-Channel MOSFET stands as a testament to innovation in power semiconductor technology, offering engineers and designers a robust solution for demanding applications. This advanced device combines high voltage capabilities with optimized thermal management, making it ideal for industrial, automotive, and consumer electronics systems where reliability and performance are paramount.

Built on STMicroelectronics' proprietary SuperMESH3™ technology, the STD2N62K3 delivers an exceptional balance between conduction and switching losses. With a 620V drain-source voltage rating and 2.2A continuous drain current capability, this DPAK-packaged MOSFET bridges the gap between high-power discrete devices and compact surface-mount solutions. Its 3.6Ω maximum RDS(on) at 10V gate voltage ensures minimal power dissipation even under challenging operating conditions, while the ±30V gate voltage rating provides enhanced design flexibility.

Key Technical Specifications

The device's surface-mount DPAK package (TO-252-3) combines the thermal advantages of traditional power packages with modern PCB assembly compatibility. Its 45W maximum power dissipation rating (at TC) enables operation in high-temperature environments without requiring complex cooling solutions. The 340pF input capacitance at 50V VDS ensures fast switching performance while maintaining stability in high-frequency applications.

Engineered for versatility, the STD2N62K3 finds applications in diverse fields including motor drives, power supplies, lighting systems, and industrial automation equipment. The device's 4.5V gate threshold voltage (at 50µA) makes it compatible with standard logic-level drive circuits, simplifying system integration while maintaining optimal performance. Its tape-and-reel packaging format (TR) streamlines high-volume manufacturing processes, ensuring consistent supply chain reliability.

As part of STMicroelectronics' extensive SuperMESH3™ family, this MOSFET benefits from decades of semiconductor innovation. The technology's optimized cell structure reduces switching losses while maintaining excellent avalanche ruggedness, ensuring long-term reliability even in harsh operating conditions. Designers can confidently implement this device in applications ranging from DC-DC converters to motor control systems, knowing they're working with a component that meets automotive-grade quality standards.

For engineers seeking to maximize system efficiency while minimizing component count, the STD2N62K3 offers an ideal combination of performance characteristics. Its compact DPAK footprint saves valuable PCB space without compromising power handling capabilities, making it particularly suitable for space-constrained designs. The device's thermal performance, combined with its high operating temperature rating, allows for reduced derating in elevated temperature environments - a critical consideration in modern power electronics design.

When implementing the STD2N62K3 in your next design, consider pairing it with appropriate gate drive circuitry to fully leverage its performance capabilities. The device's ±30V gate voltage rating provides design flexibility, allowing operation with both standard and enhanced gate drive voltages. For high-frequency switching applications, its 15nC gate charge specification ensures minimal switching losses while maintaining fast transition times.

Tags: Power Electronics, Semiconductor Devices, Industrial Components, Automotive Electronics, Surface Mount Technology