STD25NF10T4 N-Channel MOSFET 100V 25A DPAK
- Brand: STMicroelectronics
- Product Code: STD25NF10T4
- Availability: In Stock
$0.50
- Ex Tax: $0.50
Revolutionizing Power Management: STMicroelectronics' STripFET™ II Technology in Action
STMicroelectronics continues to push semiconductor innovation boundaries with its STripFET™ II series, exemplified by the STD25NF10T4 N-Channel MOSFET. This advanced power transistor combines cutting-edge silicon technology with optimized packaging to deliver exceptional performance for demanding industrial and automotive applications. With its 100V rating and 25A continuous drain current capability, this device represents the perfect balance between robustness and efficiency.
Technical Excellence in Power Discrete Design
Engineered for high-performance switching applications, the STD25NF10T4 demonstrates remarkable electrical characteristics. Its 38mΩ maximum RDS(on) at 12.5A and 10V gate-source voltage ensures minimal conduction losses, while the 55nC gate charge specification enables fast switching transitions. The device's ±20V gate-source voltage rating provides enhanced reliability in challenging operating conditions.
| Parameter | Specification |
|---|---|
| VDSS | 100 V |
| ID @ 25°C | 25 A |
| RDS(on) @ 12.5A, 10V | 38 mΩ |
| Qg @ 10V | 55 nC |
| Operating Temperature | -55°C to 175°C |
Advanced Packaging for Thermal Performance
Housed in a surface-mount DPAK (TO-252-3) package, this MOSFET combines the benefits of modern packaging technology with proven thermal management capabilities. The three-terminal configuration featuring two leads plus tab enables efficient heat dissipation, while the 1550 pF input capacitance at 25V ensures stable operation in high-frequency applications. This packaging solution supports the device's 100W maximum power dissipation rating (Tc).
The STripFET™ II technology underlying this device incorporates optimized cell structure design and advanced processing techniques. This results in superior avalanche energy ratings and enhanced short-circuit withstand capabilities, making it particularly suitable for applications requiring exceptional ruggedness.
Industrial and Automotive Applications
Designed for a wide range of power conversion applications, the STD25NF10T4 excels in:
- Industrial motor drives and variable frequency drives
- Power supply units and DC-DC converters
- Automotive powertrain systems and body electronics
- Uninterruptible power supplies (UPS)
- Renewable energy systems
Its 4V gate threshold voltage (at 250µA) ensures compatibility with standard logic-level gate drivers while maintaining excellent noise immunity. The device's 25A continuous drain current rating at 25°C case temperature, combined with its low on-resistance, makes it ideal for high-efficiency power stages.
Design Advantages and System Benefits
For engineers seeking to optimize power systems, this MOSFET offers multiple advantages:
1. Efficiency Optimization: The combination of low RDS(on) and minimal gate charge reduces both conduction and switching losses, enabling higher system efficiency in power conversion circuits.
2. Thermal Reliability: The DPAK package's thermal performance, combined with the device's 175°C maximum junction temperature rating, allows operation in demanding thermal environments without performance derating.
3. Space-Saving Design: Surface-mount packaging enables compact PCB layouts while maintaining the thermal performance of larger through-hole packages.
4. Robustness: The device's avalanche energy rating and short-circuit capability ensure reliable operation in challenging conditions typical of industrial and automotive environments.
By leveraging STMicroelectronics' proven STripFET™ technology, designers can achieve significant performance improvements in motor control, power supply, and automotive systems. The device's active status in ST's product portfolio ensures long-term availability for production applications.
Tags: Power Transistors, Industrial Electronics, Automotive Components, Surface Mount Technology, High Voltage MOSFET