STMicroelectronics STD16NF06LT4 N-Channel MOSFET 60V 24A DPAK
- Brand: STMicroelectronics
- Product Code: STD16NF06LT4
- Availability: In Stock
$0.33
- Ex Tax: $0.33
High-Performance STMicroelectronics STD16NF06LT4 N-Channel MOSFET for Power Electronics
In the rapidly evolving world of power electronics, the STMicroelectronics STD16NF06LT4 N-Channel MOSFET emerges as a reliable and high-efficiency solution for demanding applications. This advanced semiconductor device combines robust specifications with compact design, making it ideal for engineers seeking optimal performance in power management systems, motor control circuits, and automotive electronics.
Technical Excellence in Power Transistor Design
Engineered with STMicroelectronics' proprietary STripFET™ II technology, this MOSFET delivers exceptional electrical characteristics. The device features a 60V drain-source voltage rating and can handle continuous drain currents up to 24A at 25°C. Its remarkably low on-state resistance of 70mΩ (measured at 8A with 10V gate-source voltage) ensures minimal power losses and superior thermal efficiency.
Operating parameters highlight its versatility: with a gate threshold voltage of just 1V (at 250µA), the device enables efficient switching while maintaining compatibility with standard logic circuits. The 7.5nC gate charge rating at 5V drive voltage demonstrates its capability for high-speed switching applications, while the ±18V gate-source voltage tolerance provides enhanced operational flexibility.
| Key Specifications | Performance Value |
|---|---|
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current | 24A (Tc) |
| On-State Resistance (Rds(on)) | 70mΩ @ 10V Vgs |
| Gate Charge (Qg) | 7.5nC @ 5V |
Advanced Packaging and Thermal Management
Housed in a surface-mount DPAK package (TO-252-3), the STD16NF06LT4 balances compact form factor with excellent thermal dissipation capabilities. This packaging solution enables 40W power dissipation at case temperature while maintaining compatibility with automated PCB assembly processes. The device's operating temperature range of -55°C to 175°C ensures reliable performance in extreme environments, from industrial control systems to automotive applications.
The MOSFET's design incorporates critical protection features including robust input capacitance (370pF at 25V Vds) and overvoltage protection through its ±18V gate-source voltage rating. These characteristics make it particularly suitable for applications requiring stable operation in electrically noisy environments.
Applications and Industry Use Cases
This versatile N-Channel MOSFET finds applications across multiple domains:
- Power supply units and DC-DC converters
- Motor drives and actuator control
- Automotive electrical systems
- Industrial automation equipment
- Renewable energy systems
Its combination of high current capability, low on-resistance, and robust packaging makes it particularly valuable in battery-powered systems where efficiency and thermal management are critical. Engineers working on next-generation power electronics will appreciate its compatibility with standard gate drive circuits and its ability to maintain performance under demanding operating conditions.
Tags: Power Transistors, STMicroelectronics Components, DPAK Package, N-Channel FETs, Automotive Electronics