STMicroelectronics STB6NK60ZT4 N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STB6NK60ZT4
- Availability: In Stock
$0.40
- Ex Tax: $0.40
STB6NK60ZT4 N-Channel MOSFET: Powering High-Voltage Applications with Precision
The STMicroelectronics STB6NK60ZT4 N-Channel MOSFET represents a pinnacle of performance in power electronics, engineered for demanding industrial and automotive applications. As part of STM's renowned SuperMESH™ family, this 600V, 6A D2PAK packaged transistor delivers exceptional efficiency through its optimized design and advanced silicon technology. Whether you're designing power supplies, motor drives, or industrial automation systems, this MOSFET offers the perfect balance of ruggedness and precision.
Technical Excellence in Power Management
At its core, the STB6NK60ZT4 features a remarkably low on-resistance of 1.2Ω at 3A, ensuring minimal power losses and enhanced thermal performance. The device's 600V breakdown voltage rating makes it ideal for high-voltage switching applications, while its surface-mount D2PAK package facilitates efficient heat dissipation through its thermally enhanced tab. With gate charge characteristics of 46nC at 10V drive voltage, this transistor enables rapid switching transitions that reduce electromagnetic interference (EMI) and improve system efficiency.
Engineered for reliability in harsh environments, this MOSFET maintains stable operation across extreme temperatures (-55°C to 150°C), making it suitable for automotive under-hood applications and industrial equipment exposed to challenging conditions. Its ±30V gate voltage tolerance provides additional design flexibility while maintaining robust short-circuit protection.
| Parameter | Value |
|---|---|
| Max Drain-Source Voltage | 600V |
| Continuous Drain Current | 6A |
| RDS(on) | 1.2Ω @ 3A, 10V |
Design Flexibility Across Industries
While marked as 'Not For New Designs', the STB6NK60ZT4 remains a popular choice for maintenance engineers and designers working with legacy systems. Its TO-263AB package offers excellent thermal performance for surface-mount assembly, while maintaining compatibility with standard PCB layouts. The device's 110W power dissipation rating at case temperature ensures reliable operation in high-power applications without requiring complex cooling solutions.
The transistor's 4.5V gate threshold voltage enables compatibility with standard logic-level drivers, simplifying gate drive circuitry design. Its 905pF input capacitance at 25V facilitates controlled switching speeds, balancing efficiency with EMI reduction. These characteristics make it particularly valuable in motor control systems, power factor correction circuits, and industrial automation equipment where proven reliability is paramount.
Proven Performance in Critical Applications
For engineers maintaining existing systems or seeking alternative solutions, the STB6NK60ZT4 offers a well-documented performance profile accumulated over years of field use. Its SuperMESH™ technology provides superior avalanche energy ratings compared to conventional MOSFET structures, enhancing robustness in inductive switching applications. The device's thermal stability ensures consistent performance in continuous operation environments, from HVAC systems to factory automation equipment.
While newer silicon carbide (SiC) and gallium nitride (GaN) technologies emerge, the STB6NK60ZT4 remains a cost-effective solution for applications where its specific voltage/current characteristics align with design requirements. Its widespread adoption across industrial sectors has created extensive design resources and application notes to support implementation.
Tags: Power Management, N-Channel Transistors, High Voltage MOSFETs, Industrial Electronics, Automotive Components