STB6N60M2 N-Channel MOSFET 600V 4.5A D2PAK | STMicroelectronics

STB6N60M2 - High-Performance N-Channel MOSFET for Demanding Power Applications

STMicroelectronics introduces the STB6N60M2, a cutting-edge N-Channel MOSFET engineered for high-voltage power systems requiring exceptional reliability and efficiency. This advanced semiconductor component combines robust specifications with innovative MDmesh™ II Plus technology, making it ideal for industrial power supplies, motor control systems, and automotive electronics applications where performance under extreme conditions is critical.

Technical Excellence in Power Management

Designed with a 600V drain-source voltage rating and 4.5A continuous drain current capacity, the STB6N60M2 delivers exceptional power handling capabilities while maintaining minimal conduction losses. Its 1.2Ω maximum Rds(on) at 2.25A and 10V gate-source voltage ensures efficient power transfer with reduced thermal stress, enabling designers to create compact, high-density power solutions.

The device's advanced gate charge characteristics (8nC max @ 10V) and optimized input capacitance (232pF max @ 100V) enable fast switching performance, making it particularly suitable for high-frequency DC-DC converters and power factor correction circuits. With ±25V gate-source voltage tolerance and 4V threshold voltage (max), this MOSFET maintains stable operation across diverse environmental conditions.

Thermal Performance and Robust Design

Engineered for demanding environments, the STB6N60M2 features a surface-mount D2PAK package that combines excellent thermal dissipation with space-saving design. Its 60W maximum power dissipation rating (at case temperature) and operating temperature range of -55°C to 150°C ensure reliable performance in harsh industrial and automotive conditions. The through-hole tab design facilitates efficient heat sinking while maintaining mechanical stability in vibration-prone applications.

This power MOSFET incorporates STMicroelectronics' proprietary MDmesh™ II Plus technology, which significantly reduces switching losses while maintaining avalanche ruggedness. The device's inherent reliability is further enhanced by its comprehensive protection features including advanced gate oxide stability and optimized body diode characteristics.

Applications and Design Flexibility

The STB6N60M2's versatile performance characteristics make it suitable for a wide range of applications including:

• Industrial power supplies and battery chargers
• Motor drives and variable frequency drives
• Solar inverters and energy storage systems
• Automotive power systems and EV charging infrastructure
• Uninterruptible power supplies (UPS)

Its compatibility with standard gate drive circuits and standard footprint enables seamless integration into existing designs while offering performance upgrades over conventional power MOSFETs. The RoHS-compliant D2PAK package meets modern environmental standards while providing excellent mechanical durability.

Quality and Reliability

As part of STMicroelectronics' comprehensive power semiconductor portfolio, the STB6N60M2 undergoes rigorous quality testing to ensure long-term reliability in mission-critical applications. The device's active product status and tape & reel packaging format (TR) ensure continuous supply availability for both prototyping and high-volume manufacturing requirements.

Tags: MOSFET Transistors, High Voltage Power Devices, Industrial Electronics Components, Surface Mount Semiconductors, Electrical Circuit Protection